{"title":"具有本征掺杂区的正向偏置pn结二极管的瞬态电压超调建模","authors":"S. Holland, G. Notermans, Hans-Martin Ritter","doi":"10.23919/EOS/ESD.2018.8509760","DOIUrl":null,"url":null,"abstract":"The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is developed which takes the effect of impact ionization into account and exhibits an excellent match with the TCAD simulations and measurement data.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Modelling transient voltage overshoot of a forward biased pn-junction diode with intrinsic doped region\",\"authors\":\"S. Holland, G. Notermans, Hans-Martin Ritter\",\"doi\":\"10.23919/EOS/ESD.2018.8509760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is developed which takes the effect of impact ionization into account and exhibits an excellent match with the TCAD simulations and measurement data.\",\"PeriodicalId\":328499,\"journal\":{\"name\":\"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EOS/ESD.2018.8509760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling transient voltage overshoot of a forward biased pn-junction diode with intrinsic doped region
The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is developed which takes the effect of impact ionization into account and exhibits an excellent match with the TCAD simulations and measurement data.
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