提高地址解码器抗噪性能的高性能动态电路技术

L. Wen, Z. Li, Y. Li
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引用次数: 7

摘要

动态电路因其高性能而广泛应用于大规模集成芯片中。不幸的是,它们比静态互补金属氧化物半导体电路更容易受到噪声的影响。随着工艺技术和电源电压的不断降阶,提高动态电路的抗噪性至关重要。本文提出了两种提高动态地址解码器容忍度的新方案,并将其性能、容忍度和功耗与传统动态译码电路和原有方案进行了比较。采用所提出的延迟技术的动态4-16解码器在噪声容限和性能方面分别提高了131.5和2.6%,而利用所提出的镜像方案的4-16解码器则分别提高了291.2和25.2%;两者均采用65纳米制程技术。此外,所提出的技术对工艺变化的抵抗力更强,对低功率供应的容忍度更高。
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High-performance dynamic circuit techniques with improved noise immunity for address decoders
Dynamic circuits are extensively employed in very-large-scale integration chips because of their high performance. Unfortunately, they are more susceptible to noise than static complementary metal oxide semiconductor circuits. With the continuous down-scaling of process technology and the supply voltage, improved noise immunity in dynamic circuits is essential. In this study, two new schemes are proposed to enhance the noise tolerance of dynamic address decoders, and their performance, noise tolerance and power consumption are compared with those of a conventional dynamic decoding circuit and a previous scheme. A dynamic 4–16 decoder employing the proposed delay technique exhibits 131.5 and 2.6% improvements in noise tolerance and performance, respectively, whereas a 4–16 decoder exploiting the proposed mirror scheme achieves 291.2 and 25.2% improvements; both used 65 nm process technology. Moreover, the proposed techniques are more resistant to process variations and more tolerant of a lower power supply.
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