伴随空穴直接隧穿的超薄栅极氧化物降解:能否保持p- mosfet的长期可靠性?

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904322

K. Deguchi, S. Uno, A. Ishida, T. Hirose, Y. Kamakura, K. Taniguchi

{"title":"伴随空穴直接隧穿的超薄栅极氧化物降解:能否保持p- mosfet的长期可靠性?","authors":"K. Deguchi, S. Uno, A. Ishida, T. Hirose, Y. Kamakura, K. Taniguchi","doi":"10.1109/IEDM.2000.904322","DOIUrl":null,"url":null,"abstract":"Degradation of ultra-thin gate oxide films accompanied by hole direct tunneling is investigated using a substrate hot hole injection technique. Although cold hole injection from the inversion layer of p-MOSFET does not affect the oxide reliability, the drastic degradation during the hot hole injection was observed. The new experimental findings on the hot-hole induced oxide degradation are well explained by the model of two-hole capture by an O vacancy.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Degradation of ultra-thin gate oxides accompanied by hole direct tunneling: can we keep long-term reliability of p-MOSFETs?\",\"authors\":\"K. Deguchi, S. Uno, A. Ishida, T. Hirose, Y. Kamakura, K. Taniguchi\",\"doi\":\"10.1109/IEDM.2000.904322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Degradation of ultra-thin gate oxide films accompanied by hole direct tunneling is investigated using a substrate hot hole injection technique. Although cold hole injection from the inversion layer of p-MOSFET does not affect the oxide reliability, the drastic degradation during the hot hole injection was observed. The new experimental findings on the hot-hole induced oxide degradation are well explained by the model of two-hole capture by an O vacancy.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904322\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用衬底热孔注入技术研究了超薄栅氧化膜在空穴直接隧穿过程中的降解。虽然从p-MOSFET反转层注入冷孔并不影响氧化物的可靠性，但在热孔注入过程中观察到氧化物的急剧退化。热孔诱导氧化降解的新实验结果很好地解释了氧空位双孔捕获模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Degradation of ultra-thin gate oxides accompanied by hole direct tunneling: can we keep long-term reliability of p-MOSFETs?

Degradation of ultra-thin gate oxide films accompanied by hole direct tunneling is investigated using a substrate hot hole injection technique. Although cold hole injection from the inversion layer of p-MOSFET does not affect the oxide reliability, the drastic degradation during the hot hole injection was observed. The new experimental findings on the hot-hole induced oxide degradation are well explained by the model of two-hole capture by an O vacancy.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

自引率

0.00%

发文量