{"title":"横向边界长度对平面二极管电流电压特性和振荡效率的影响","authors":"E. Prokhorov, O. Botsula, O. A. Reutina","doi":"10.1109/MSMW.2013.6622027","DOIUrl":null,"url":null,"abstract":"Operation principles of diodes with lateral borders which possess difference mobility have been described earlier. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure based on n-type semiconductor, grown on semi-insulating (i) substrate.","PeriodicalId":104362,"journal":{"name":"2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode\",\"authors\":\"E. Prokhorov, O. Botsula, O. A. Reutina\",\"doi\":\"10.1109/MSMW.2013.6622027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operation principles of diodes with lateral borders which possess difference mobility have been described earlier. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure based on n-type semiconductor, grown on semi-insulating (i) substrate.\",\"PeriodicalId\":104362,\"journal\":{\"name\":\"2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MSMW.2013.6622027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2013.6622027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode
Operation principles of diodes with lateral borders which possess difference mobility have been described earlier. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure based on n-type semiconductor, grown on semi-insulating (i) substrate.
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