在智能电源技术中，偏置温度应力(BTS)引起的ESD器件泄漏问题及其预防方法

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532075

Chien-Fu Huang, Yi-Feng Chang, Shui-Ming Cheng, Ming-Hsiang Song

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引用次数: 2

摘要

在基于npn的ESD夹钳中发现了由偏置温度应力(BTS)引起的泄漏问题。BTS (1.1*Vdd, 125C, 8hrs)会导致在an/ STI界面上漂移离子的积累，从而导致泄漏增加和最终器件故障。利用TCAD仿真和活化能提取模型对其机理进行了解释，并提出了两种解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bias Temperature Stress (BTS) induced ESD device's leakage issue and Its preventing solutions in smart power technology

A leakage issue induced by Bias Temperature Stress (BTS) is found in a NPN-based ESD clamp. BTS (1.1*Vdd, 125C, 8hrs) can cause an accumulation of drifted ions at an/the STI interface which leads to increased leakage and eventual device failure. TCAD simulation and activation energy extraction model are used to explain the mechanism and two solutions are proposed.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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