{"title":"带无偏置动态vt检测放大器的0.5 v FD-SOI双单元DRAM","authors":"R. Takemura, K. Itoh, T. Sekiguchi","doi":"10.1145/1165573.1165602","DOIUrl":null,"url":null,"abstract":"Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free dynamic-VT sense amplifier suitable for low-voltage mid-point sensing, are presented and evaluated. New noise-generation mechanisms are also shown. Using the experimental data of an ultrathin BOX double-gate fully-depleted SOI MOST, a 1.5-ns cycle-time 65-nm 2-kb subarray was found to be feasible for embedded applications, even at 0.5 V","PeriodicalId":119229,"journal":{"name":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 0.5-V FD-SOI Twin-Cell DRAM with Offset-Free Dynamic-VT Sense Amplifiers\",\"authors\":\"R. Takemura, K. Itoh, T. Sekiguchi\",\"doi\":\"10.1145/1165573.1165602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free dynamic-VT sense amplifier suitable for low-voltage mid-point sensing, are presented and evaluated. New noise-generation mechanisms are also shown. Using the experimental data of an ultrathin BOX double-gate fully-depleted SOI MOST, a 1.5-ns cycle-time 65-nm 2-kb subarray was found to be feasible for embedded applications, even at 0.5 V\",\"PeriodicalId\":119229,\"journal\":{\"name\":\"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1165573.1165602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED'06 Proceedings of the 2006 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1165573.1165602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5-V FD-SOI Twin-Cell DRAM with Offset-Free Dynamic-VT Sense Amplifiers
Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free dynamic-VT sense amplifier suitable for low-voltage mid-point sensing, are presented and evaluated. New noise-generation mechanisms are also shown. Using the experimental data of an ultrathin BOX double-gate fully-depleted SOI MOST, a 1.5-ns cycle-time 65-nm 2-kb subarray was found to be feasible for embedded applications, even at 0.5 V
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