{"title":"利用应变硅、SiGe技术增强空穴迁移率","authors":"A. Zoolfakar, A. Ahmad","doi":"10.1109/CSPA.2009.5069248","DOIUrl":null,"url":null,"abstract":"In this research, holes mobility enhancement is studied using Silicon Germanium, SiGe technology. SiGe is deposited on silicon substrate to increase carrier mobility in the device thus will increase the drive current too. The main focus of the research is to investigate the effect of using SiGe on holes mobility. In addition, variation thicknesses of SiGe on device characteristic are also studied. Technology nodes that involve in this research are 0.9 µm, 0.8 µm and 0.7 µm. The research has been carried out using Silvaco simulation software. From the modelling result, it is observed that 100% of mobility enhancement was observed for SiGe compared to conventional PMOS.","PeriodicalId":338469,"journal":{"name":"2009 5th International Colloquium on Signal Processing & Its Applications","volume":"21 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Holes mobility enhancement using strained silicon, SiGe technology\",\"authors\":\"A. Zoolfakar, A. Ahmad\",\"doi\":\"10.1109/CSPA.2009.5069248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research, holes mobility enhancement is studied using Silicon Germanium, SiGe technology. SiGe is deposited on silicon substrate to increase carrier mobility in the device thus will increase the drive current too. The main focus of the research is to investigate the effect of using SiGe on holes mobility. In addition, variation thicknesses of SiGe on device characteristic are also studied. Technology nodes that involve in this research are 0.9 µm, 0.8 µm and 0.7 µm. The research has been carried out using Silvaco simulation software. From the modelling result, it is observed that 100% of mobility enhancement was observed for SiGe compared to conventional PMOS.\",\"PeriodicalId\":338469,\"journal\":{\"name\":\"2009 5th International Colloquium on Signal Processing & Its Applications\",\"volume\":\"21 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 5th International Colloquium on Signal Processing & Its Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSPA.2009.5069248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 5th International Colloquium on Signal Processing & Its Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSPA.2009.5069248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Holes mobility enhancement using strained silicon, SiGe technology
In this research, holes mobility enhancement is studied using Silicon Germanium, SiGe technology. SiGe is deposited on silicon substrate to increase carrier mobility in the device thus will increase the drive current too. The main focus of the research is to investigate the effect of using SiGe on holes mobility. In addition, variation thicknesses of SiGe on device characteristic are also studied. Technology nodes that involve in this research are 0.9 µm, 0.8 µm and 0.7 µm. The research has been carried out using Silvaco simulation software. From the modelling result, it is observed that 100% of mobility enhancement was observed for SiGe compared to conventional PMOS.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
