{"title":"薄、厚MOS栅极氧化物等离子体损伤的快速生产WLR表征方法","authors":"A. Martin, C. Sior, C. Schlunder","doi":"10.1109/IRWS.2006.305220","DOIUrl":null,"url":null,"abstract":"The main goal of this work is to present a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Fast productive WLR characterisation methods of plasma induced damage of thin and thick MOS gate oxides\",\"authors\":\"A. Martin, C. Sior, C. Schlunder\",\"doi\":\"10.1109/IRWS.2006.305220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main goal of this work is to present a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors\",\"PeriodicalId\":199223,\"journal\":{\"name\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2006.305220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fast productive WLR characterisation methods of plasma induced damage of thin and thick MOS gate oxides
The main goal of this work is to present a sensitive method for the testing of PID which is applicable to all oxide thicknesses and types of MOS transistors
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