{"title":"基于SiGe BiCMOS技术的28 ghz 4通道双矢量接收机相控阵","authors":"Yi-Shin Yeh, B. Walker, E. Balboni, B. Floyd","doi":"10.1109/RFIC.2016.7508325","DOIUrl":null,"url":null,"abstract":"This paper presents a 28-GHz four-channel phased-array receiver in 120-nm SiGe BiCMOS technology for 5G cellular application. The phased-array receiver employs scalar-only weighting functions within each front-end and then global quadrature power combining to realize beamforming. Differential LNAs and dual-vector variable-gain amplifiers are used to realize each front-end with compact area. Each front-end achieves 5.1 to 7 dB noise figure, -16.8 to -13.8 dBm input compression point, -10.5 to -8.9 dBm input third-order intercept point across 4-bit phase settings and a 3-dB bandwidth of 26.5 to 33.9GHz, while consuming 136 mW per element. RMS gain and phase errors are <; 0.6 dB and <; 5.4° at 28-32 GHz respectively, and all four elements reveal well-matched responses.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 28-GHz 4-channel dual-vector receiver phased array in SiGe BiCMOS technology\",\"authors\":\"Yi-Shin Yeh, B. Walker, E. Balboni, B. Floyd\",\"doi\":\"10.1109/RFIC.2016.7508325\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 28-GHz four-channel phased-array receiver in 120-nm SiGe BiCMOS technology for 5G cellular application. The phased-array receiver employs scalar-only weighting functions within each front-end and then global quadrature power combining to realize beamforming. Differential LNAs and dual-vector variable-gain amplifiers are used to realize each front-end with compact area. Each front-end achieves 5.1 to 7 dB noise figure, -16.8 to -13.8 dBm input compression point, -10.5 to -8.9 dBm input third-order intercept point across 4-bit phase settings and a 3-dB bandwidth of 26.5 to 33.9GHz, while consuming 136 mW per element. RMS gain and phase errors are <; 0.6 dB and <; 5.4° at 28-32 GHz respectively, and all four elements reveal well-matched responses.\",\"PeriodicalId\":163595,\"journal\":{\"name\":\"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2016.7508325\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28-GHz 4-channel dual-vector receiver phased array in SiGe BiCMOS technology
This paper presents a 28-GHz four-channel phased-array receiver in 120-nm SiGe BiCMOS technology for 5G cellular application. The phased-array receiver employs scalar-only weighting functions within each front-end and then global quadrature power combining to realize beamforming. Differential LNAs and dual-vector variable-gain amplifiers are used to realize each front-end with compact area. Each front-end achieves 5.1 to 7 dB noise figure, -16.8 to -13.8 dBm input compression point, -10.5 to -8.9 dBm input third-order intercept point across 4-bit phase settings and a 3-dB bandwidth of 26.5 to 33.9GHz, while consuming 136 mW per element. RMS gain and phase errors are <; 0.6 dB and <; 5.4° at 28-32 GHz respectively, and all four elements reveal well-matched responses.