单结太阳能电池缓冲层设计研究

Hong Zhu, S. Fonash
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引用次数: 3

摘要

利用作者的微电子与光子结构分析(AMPS)计算机程序,探索了两种不同的方法来减少太阳能电池界面的影响。他们考虑的两种特殊方法都侧重于在a-SiC:H和a-Si:H之间的p层/吸收器界面处形成场,以增强p-i-n太阳能电池的性能,在这两种情况下,他们都认为这可以在不引入任何新缺陷的情况下完成。研究的两种方法是:(1)带隙分级缓冲层;(2)掺杂缓冲层。
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Study of buffer layer design in single junction solar cells
Two different approaches to reduce the influence of the solar cell interface have been explored using the authors' AMPS (Analysis of Microelectronics and Photonic Structures) computer program. The two particular approaches they considered both focus on shaping the field at the p layer/absorber interface between a-SiC:H and a-Si:H to enhance p-i-n solar cell performance and in both cases they assume this can be done without introducing any new defects at the interface. The two approaches examined are: (1) the bandgap grading buffer layer; and (2) the doped buffer layer.
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