同时实现输入阻抗和最小噪声匹配的低噪声放大器

Bum-Kyum Kim, D. Im, Jaeyoung Choi, Kwyro Lee
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引用次数: 7

摘要

采用0.18µm CMOS工艺,实现了一种具有电感源退化的CMOS互补电容负载LNA,用于900MHz应用。为了同时实现输入阻抗和最小噪声匹配,提出了容性加载技术。由于采用容性加载技术,与传统的源性退化级联电路相比,该电路通过减少源退化电感和门电感,在保持源阻抗匹配的同时,噪声系数(NF)可以完全接近NFmin。测量结果表明,该LNA在900 MHz时的功率增益为12 dB, NF为1 dB, IIP3为+7.7 dBm,输入P1-dB为−5 dBm,从1.8 V电源电压中汲取9 mA。
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A low noise amplifier simultaneously achieving input impedance and minimum noise matching
A CMOS complementary capacitive loaded LNA with inductively source degeneration is implemented for 900MHz application using a 0.18-µm CMOS process. In order to achieve simultaneous input impedance and minimum noise matching, the capacitive loading technique is proposed. Owing to the capacitive loading technique, the noise figure (NF) of the proposed LNA can be perfectly close to NFmin while maintaining the source impedance matching by reducing the source degeneration inductor and gate inductor contrast to conventional cascode LNA with inductively source degeneration. The measurements demonstrate that the LNA has a power gain of 12 dB, a NF of 1 dB, an IIP3 of +7.7 dBm, and an input P1-dB of −5 dBm at 900 MHz while drawing 9 mA from a 1.8 V supply voltage.
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