{"title":"在3D RESURF连接处注入少量载流子","authors":"F. Udrea, A. Popescu, R. Ng, G. Amaratunga","doi":"10.1109/ISPSD.2000.856806","DOIUrl":null,"url":null,"abstract":"In this paper we report a novel class of semiconductor devices termed 3D devices, based on the application of the RESURF concept to the the third dimension. For the first time we demonstrate devices based on pure three-dimensional on-state/blocking operation with the third-dimension junction acting to enhance the breakdown capability in the voltage blocking mode and provide conductivity modulation in the on-state. A brief discussion of the ideal substrate to enhance breakdown performance is also given.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Minority carrier injection across the 3D RESURF junction\",\"authors\":\"F. Udrea, A. Popescu, R. Ng, G. Amaratunga\",\"doi\":\"10.1109/ISPSD.2000.856806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we report a novel class of semiconductor devices termed 3D devices, based on the application of the RESURF concept to the the third dimension. For the first time we demonstrate devices based on pure three-dimensional on-state/blocking operation with the third-dimension junction acting to enhance the breakdown capability in the voltage blocking mode and provide conductivity modulation in the on-state. A brief discussion of the ideal substrate to enhance breakdown performance is also given.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Minority carrier injection across the 3D RESURF junction
In this paper we report a novel class of semiconductor devices termed 3D devices, based on the application of the RESURF concept to the the third dimension. For the first time we demonstrate devices based on pure three-dimensional on-state/blocking operation with the third-dimension junction acting to enhance the breakdown capability in the voltage blocking mode and provide conductivity modulation in the on-state. A brief discussion of the ideal substrate to enhance breakdown performance is also given.
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