基于AD824样机的4通道低噪声轨对轨运算放大器aRD824电气方案的研制

Dmitry Kostrichkin, S. Rudenko, M. Lapkis, A. Atvars
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摘要

adi公司的AD824芯片是一款低功耗单极性Rail - to - Rail出口4通道运算放大器,输入端为n通道FET晶体管。它的特性允许它们用于光子学和医学的各种高欧姆探测器。任务是构建一个与AD824具有相似性能特征的运算放大器aRD824。为此,对AD824芯片及其电气方案进行了分析,并对其部分模块进行了制作和测试。据悉,生产企业“Integral”的生产线未能生产好用于AD824的FET晶体管和薄层电阻,导致芯片损坏率很高。为此,提出了AD824各模块电气方案的修改方案。提出用离子注入或扩散电阻代替薄膜电阻器。输入级模块有额外的源中继器。第二级模块被修改得更加对称。输出级模块获得额外的电阻和电容来实现频率补偿。电流参考模块中的一个FET晶体管被其他元件取代。在PSpice软件中对修改后的模块电气方案进行了性能测试。对aRD824的全电气化方案进行了仿真,结果表明,aRD824在频率增益和信号响应测试方面具有与AD824相似的特性。aRD824芯片的目标特性包括0.1Hz ~ 10 Hz输入时的低电压噪声< 4 μV,低输入偏置电流< 15 pA,偏置电压< 0.5 mV。
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Development of electric scheme for 4-channel low noise rail-to-rail operational amplifier aRD824 based on AD824 prototype
Analog Devices chip AD824 is a low-power single polarity Rail to Rail in exit 4-channel operational amplifier with n-channel FET transistors at the input. Its characteristics allow to use them in various high ohmic detectors for photonics and medicine. The task was to construct an operational amplifier aRD824 that has similar performance characteristics of AD824. For this, AD824 chip and its electric scheme were analyzed, and some of its modules were produced and tested. It appeared that the production line of the producer “Integral” could not produce well FET transistors and thin layer resistors that are used in AD824, which resulted in a high percentage of damaged chips. For this, the modification of electric schemes for various modules of AD824 was proposed. Thin film resistors were proposed to be substituted by ion implantation or diffusion resistors. The input stage module got additional source repeaters. The second stage module was modified to be more symmetric. The output stage module obtained additional resistors and capacitors to achieve a frequency compensation. One FET transistor in the current reference module was substituted by other elements. The performance of modified electric schemes of modules was tested in PSpice software. Simulations of the full electric scheme for aRD824 were made and showed that it demonstrates similar characteristics as AD824 in frequency-gain and signal response tests. The targeted characteristics for aRD824 chip include low voltage noise < 4 μV for 0.1Hz to 10 Hz input, low input bias current < 15 pA, and offset voltage < 0.5 mV.
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