{"title":"32nm工艺节点下高频低功耗CMOS双输出电流输送机设计","authors":"A. Imran, M. Hasan, M. W. Akram","doi":"10.1109/ARTCOM.2010.85","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a wide bandwidth high performance CMOS realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 10GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced power supply of ±0.9V and presents 2.54k??? as Rx input port resistance for a control current of 8uA.","PeriodicalId":398854,"journal":{"name":"2010 International Conference on Advances in Recent Technologies in Communication and Computing","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design of High Frequency Low Power CMOS Dual-Output Current Conveyor at 32nm Technology Node\",\"authors\":\"A. Imran, M. Hasan, M. W. Akram\",\"doi\":\"10.1109/ARTCOM.2010.85\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a wide bandwidth high performance CMOS realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 10GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced power supply of ±0.9V and presents 2.54k??? as Rx input port resistance for a control current of 8uA.\",\"PeriodicalId\":398854,\"journal\":{\"name\":\"2010 International Conference on Advances in Recent Technologies in Communication and Computing\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Advances in Recent Technologies in Communication and Computing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARTCOM.2010.85\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Advances in Recent Technologies in Communication and Computing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARTCOM.2010.85","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of High Frequency Low Power CMOS Dual-Output Current Conveyor at 32nm Technology Node
This paper presents the design of a wide bandwidth high performance CMOS realization of dual-output second generation current conveyor (CCII±) at 32nm technology node. HSPICE simulation shows that voltage and current bandwidths in excess of 10GHz are obtained, thus making the module quite suitable for applications in the microwave range of frequencies. Besides, the circuit is able to operate at reduced power supply of ±0.9V and presents 2.54k??? as Rx input port resistance for a control current of 8uA.
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