Effect of RF sputtering parameters on PZT crystal growth

Lead zirconate titanate(PZT) due to its large polarization, large dielectric constant and good piezoelectric performance has become popular in a wide range of applications in MEMS field. The prevailing technique for PZT deposition is sol-gel method, but the stability of solution and repeated coating can't be precisely controlled. Sputtering technique is used in this work for its relatively simple fabrication process, uniform thickness. In this work, PZT films are sputtered on Pt/Ti/SiO2/Si substrate prior to annealing. PZT preferential orientation is highly depend on the sputtering parameters. X-ray diffraction(XRD) analysis has been performed to compare the crystal growth. TiO2 seed layer is also introduced in this work.