{"title":"能量色散x射线微分析中电子穿透与束流加速电压的关系研究","authors":"S. Lee, H. Younan, Z. Siping, Mo Zhi-qiang","doi":"10.1109/SMELEC.2006.380704","DOIUrl":null,"url":null,"abstract":"Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5 kV, 10 kV, 15 kV, 20 kV, 25 kV and 30 kV for the various possible elements/materials in wafer fabrication.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis\",\"authors\":\"S. Lee, H. Younan, Z. Siping, Mo Zhi-qiang\",\"doi\":\"10.1109/SMELEC.2006.380704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5 kV, 10 kV, 15 kV, 20 kV, 25 kV and 30 kV for the various possible elements/materials in wafer fabrication.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis
Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5 kV, 10 kV, 15 kV, 20 kV, 25 kV and 30 kV for the various possible elements/materials in wafer fabrication.
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