系统广泛表征MOS和SOI MOS结构的手段，电荷泵

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004090

S. Szostak, L. Lukasiak, A. Jakubowski

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摘要

MOS器件的性能在很大程度上取决于Si-SiO/sub - 2/接口的质量。本文提出了一种用电荷泵送的方法表征MOS和MOS SOI结构的新系统。mosfet和SOI mosfet用作测试结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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System for extensive characterization of MOS and SOI MOS structures by means of charge pumping

The performance of MOS devices is to a large extent determined by the quality of the Si-SiO/sub 2/ interface. This paper presents a new system for characterization of MOS and MOS SOI structures by means of charge pumping. MOSFETs and SOI MOSFETs are used as test structures.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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