P. Asbeck, K. Wang, D.L. Miller, G. Sullivan, N. Sheng, E. Sovero, J. Higgins
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Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits
This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f/sub max/ above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BV/sub CBO/) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
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