J. Hwang, Soon Sub Kim, J. Rhee, B. Chun, Il Sang You, Oh. Byung Seok, Y. K. Kim, Taewan Kim, W. Park
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Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB
MTJs with the synthetic antiferromagnetic (SAF) free layer consisting of CoFeSiB/Ru/CoFeSiB were prepared because a SAF structure can reduce the magnetostatic coupling. Magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs were investigated by experiment and by simulation. SAF structures show lower TMR ratio and coercivity (H/sub c/) than single free layer due to low net magnetic moment. The CoFeSiB SAF structure was found to have lower exchange energy.
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