具有横向漏波导结构的超高量子效率的AlGaInP可见激光二极管

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307495

I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka

{"title":"具有横向漏波导结构的超高量子效率的AlGaInP可见激光二极管","authors":"I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka","doi":"10.1109/IEDM.1992.307495","DOIUrl":null,"url":null,"abstract":"AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure\",\"authors\":\"I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka\",\"doi\":\"10.1109/IEDM.1992.307495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文首次展示了具有侧漏波导结构的AlGaInP可见激光二极管。该激光器除具有基模-横模稳定性外，还具有高达43%的单面微分量子效率。高差分量子效率是由于该激光器的低传播损耗

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1992 International Technical Digest on Electron Devices Meeting

自引率

0.00%

发文量