{"title":"先进的RFC二极管，采用新颖的垂直结构，具有土壤性和高动态坚固性","authors":"Katsumi Nakamura, K. Shimizu","doi":"10.23919/ISPSD.2017.7988940","DOIUrl":null,"url":null,"abstract":"This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma Layer (CPL)”. The measured results of 1200 V diode show that the total loss and dynamic behavior such as the recovery softness and the dynamic ruggedness are greatly improved thanks to the proposed vertical concept. These improvements are the result of controlling the charge-carrier plasma layer and moderating the electric field gradient in CPL zone during the recovery operation. The advanced RFC diode clearly breaks through the trade-off triangle of the total loss, the recovery softness and the recovery SOA of the FWD.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Advanced RFC diode utilizing a novel vertical structure for soilness and high dynamic ruggedness\",\"authors\":\"Katsumi Nakamura, K. Shimizu\",\"doi\":\"10.23919/ISPSD.2017.7988940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma Layer (CPL)”. The measured results of 1200 V diode show that the total loss and dynamic behavior such as the recovery softness and the dynamic ruggedness are greatly improved thanks to the proposed vertical concept. These improvements are the result of controlling the charge-carrier plasma layer and moderating the electric field gradient in CPL zone during the recovery operation. The advanced RFC diode clearly breaks through the trade-off triangle of the total loss, the recovery softness and the recovery SOA of the FWD.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988940\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced RFC diode utilizing a novel vertical structure for soilness and high dynamic ruggedness
This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma Layer (CPL)”. The measured results of 1200 V diode show that the total loss and dynamic behavior such as the recovery softness and the dynamic ruggedness are greatly improved thanks to the proposed vertical concept. These improvements are the result of controlling the charge-carrier plasma layer and moderating the electric field gradient in CPL zone during the recovery operation. The advanced RFC diode clearly breaks through the trade-off triangle of the total loss, the recovery softness and the recovery SOA of the FWD.
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