Zhao-Yu Teng, M. Mo, W. Li, Min-Bing Wong, S. Chou
{"title":"TMR磁头在ESD瞬态中的击穿行为","authors":"Zhao-Yu Teng, M. Mo, W. Li, Min-Bing Wong, S. Chou","doi":"10.1109/EOSESD.2004.5272588","DOIUrl":null,"url":null,"abstract":"HBM and D-CDM breakdown testing were preformed on the latest TMR heads of different resistance. Pspice simulations were conducted for individual TMR heads based on their actual failure voltage at HBM and D-CDM, in an attempt to investigate damage current through TMR barrier, as well as voltage across TMR barrier. Results show that in short transient test-HBM and DCDM, damage current threshold (through TMR barrier) is inversely proportional to TMR resistance, while damaging current density threshold sigmah is a constant in each transient model.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Breakdown behavior of TMR head in ESD transients\",\"authors\":\"Zhao-Yu Teng, M. Mo, W. Li, Min-Bing Wong, S. Chou\",\"doi\":\"10.1109/EOSESD.2004.5272588\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"HBM and D-CDM breakdown testing were preformed on the latest TMR heads of different resistance. Pspice simulations were conducted for individual TMR heads based on their actual failure voltage at HBM and D-CDM, in an attempt to investigate damage current through TMR barrier, as well as voltage across TMR barrier. Results show that in short transient test-HBM and DCDM, damage current threshold (through TMR barrier) is inversely proportional to TMR resistance, while damaging current density threshold sigmah is a constant in each transient model.\",\"PeriodicalId\":302866,\"journal\":{\"name\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2004.5272588\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272588","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
HBM and D-CDM breakdown testing were preformed on the latest TMR heads of different resistance. Pspice simulations were conducted for individual TMR heads based on their actual failure voltage at HBM and D-CDM, in an attempt to investigate damage current through TMR barrier, as well as voltage across TMR barrier. Results show that in short transient test-HBM and DCDM, damage current threshold (through TMR barrier) is inversely proportional to TMR resistance, while damaging current density threshold sigmah is a constant in each transient model.
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