{"title":"深沟槽和井邻近对MOSFET性能的影响","authors":"Hanyu Sheng, T. Bettinger, J. Bates","doi":"10.1109/ICMTS.2015.7106113","DOIUrl":null,"url":null,"abstract":"The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The impact of deep trench and well proximity on MOSFET performance\",\"authors\":\"Hanyu Sheng, T. Bettinger, J. Bates\",\"doi\":\"10.1109/ICMTS.2015.7106113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of deep trench and well proximity on MOSFET performance
The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.
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