I/O接口电路中锁存器的光电测试

F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, P. Sanda
{"title":"I/O接口电路中锁存器的光电测试","authors":"F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, P. Sanda","doi":"10.1109/TEST.2003.1270845","DOIUrl":null,"url":null,"abstract":"Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 µm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup trigger events.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Optical and electrical testing of latchup in I/O interface circuits\",\"authors\":\"F. Stellari, P. Song, M. McManus, R. Gauthier, A. Weger, K. Chatty, M. Muhammad, P. Sanda\",\"doi\":\"10.1109/TEST.2003.1270845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 µm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup trigger events.\",\"PeriodicalId\":236182,\"journal\":{\"name\":\"International Test Conference, 2003. Proceedings. ITC 2003.\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Test Conference, 2003. Proceedings. ITC 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.2003.1270845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Test Conference, 2003. Proceedings. ITC 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2003.1270845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

对于采用倒装封装设计的0.13µm技术一代[1,2]测试芯片,采用背面光发射和电气测量来评估外部电缆I/O引脚对锁存的敏感性。几个输入/输出(I/ o)的案例研究,以及关于布局和地板规划的结论,以确保对各种类型的锁止触发事件的稳健性。
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Optical and electrical testing of latchup in I/O interface circuits
Backside light emission and electrical measurements were used to evaluate the susceptibility to latchup of externally cabled I/O pins for a 0.13 µm technology generation [1,2] test chip, which was designed in a flip-chip package. Case studies of several Inputs/Outputs (I/Os) are shown along with conclusions regarding layout and floorplanning to ensure the robustness to various types of latchup trigger events.
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