{"title":"用于降低泄漏电流和寄生双极影响的高分辨率体偏置技术","authors":"M. Sumita","doi":"10.1145/1077603.1077653","DOIUrl":null,"url":null,"abstract":"With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.","PeriodicalId":256018,"journal":{"name":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High resolution body bias techniques for reducing the impacts of leakage current and parasitic bipolar\",\"authors\":\"M. Sumita\",\"doi\":\"10.1145/1077603.1077653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.\",\"PeriodicalId\":256018,\"journal\":{\"name\":\"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1077603.1077653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1077603.1077653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High resolution body bias techniques for reducing the impacts of leakage current and parasitic bipolar
With scaling process generation, power management techniques are more significant. Body bias techniques are useful for the solutions. We propose a high resolution body bias generation circuit which supplies optimal body bias in both the active and standby mode. By using this circuit, the adjustment accuracy of threshold voltage (Vt) in the active mode was improved about 4.1 times of the conventional circuits at 0.6V forward body bias condition. In addition, for standby mode, when 128 kByte SRAM was supplied back body bias by this generator, the off-state leakage current was reduced to 50% of a fixed back body bias.