“RF-SoC”:片上CMOS功率放大器的集成趋势:外接放大器与集成放大器在便携式无线通信中的优势

D. Lie
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引用次数: 12

摘要

自20世纪90年代初以来,RFIC一体化取得了巨大进展。例如,用于GSM、WLAN、蓝牙和DECT应用的基于si的单芯片产品已经商业化。然而,射频功率放大器(PAs)和开关在手机应用的单芯片CMOS/BiCMOS收发器ic的背景下往往保持片外。最近,一些WLAN/蓝牙供应商已经成功地将要求较低的pa集成到收发器上。本文将重点介绍包含大功率PA的单芯片射频系统单片(即“RF-SoC”)实现。提供了集成更高功率pa所固有的所有权衡的分析。分析包括开发成本、上市时间、功率效率、产量、可靠性和性能问题。本文将简要回顾文献中高度集成的CMOS WiFi收发器的最新设计趋势,重点介绍受集成与外部pa之间选择影响的RF-SoC产品设计权衡。
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“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications
RFIC integration has seen dramatic progress since the early 1990s. For example, Si-based single-chip products for GSM, WLAN, Bluetooth, and DECT applications have become commercially available. However, RF power amplifiers (PAs) and switches tend to remain off-chip in the context of single-chip CMOS/BiCMOS transceiver ICs for handset applications. More recently, several WLAN/Bluetooth vendors have successfully integrated less demanding PAs onto the transceivers. This paper will focus on single-chip RF-system-on-a-chip (i.e., “RF-SoC”) implementations that include a high-power PA. An analysis of all tradeoffs inherent to integrating higher power PAs is provided. The analysis includes the development cost, time-to-market, power efficiency, yield, reliability, and performance issues. Recent design trends on highly integrated CMOS WiFi transceivers in the literature will be briefly reviewed with emphasis on the RF-SoC product design tradeoffs impacted by the choice between integrated versus external PAs.
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