P. Kempf, M. von Ortenberg, E. Bangert, G. Landwehr, G. Weimann, W. Schlapp
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Submillimeter-magneto spectroscopy on p-type gaas/ga(al)as hetero structures
As compared to n-type GaAs/Ga(Al)As hetero junctions, the corresponding p-type structures are by far neither as well understood nor thoroughly explored. The reasons for this are the complicated valence-band structure from the theoretical point of view and the relatively low mobility of the 2D-holes from the experimental side. As a matter of fact, the summary of experimental and theoretical results re-mained fragmentary and inconsistent, so that no direct criterion could be used to distinguish between the different modes established [1–4]. In the present study we present a complex set of submilimeter-magneto-transmission data up to 35 Tesla for different sample configurations and temperatures in context with a straight-on simulation of the data applying KUBO's formula [5] for the microscopic high-frequency conductivity in a realistic op-tical multi-layer system including inter-ference effects.