p型gaas/ga(al)异质结构的亚毫米磁能谱分析

P. Kempf, M. von Ortenberg, E. Bangert, G. Landwehr, G. Weimann, W. Schlapp
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引用次数: 0

摘要

与n型GaAs/Ga(Al)As异质结相比,相应的p型结构迄今为止既没有得到很好的理解,也没有得到彻底的探索。究其原因,从理论角度看,价带结构复杂,而从实验角度看,二维空穴的迁移率相对较低。事实上,对实验和理论结果的总结仍然是零碎和不一致的,因此没有直接的标准来区分所建立的不同模式[1-4]。在本研究中,我们提出了一组复杂的亚毫米磁传输数据,在不同的样品配置和温度下,最高可达35特斯拉,并应用KUBO公式[5]直接模拟了现实光学多层系统中包括干涉效应的微观高频电导率。
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Submillimeter-magneto spectroscopy on p-type gaas/ga(al)as hetero structures
As compared to n-type GaAs/Ga(Al)As hetero junctions, the corresponding p-type structures are by far neither as well understood nor thoroughly explored. The reasons for this are the complicated valence-band structure from the theoretical point of view and the relatively low mobility of the 2D-holes from the experimental side. As a matter of fact, the summary of experimental and theoretical results re-mained fragmentary and inconsistent, so that no direct criterion could be used to distinguish between the different modes established [1–4]. In the present study we present a complex set of submilimeter-magneto-transmission data up to 35 Tesla for different sample configurations and temperatures in context with a straight-on simulation of the data applying KUBO's formula [5] for the microscopic high-frequency conductivity in a realistic op-tical multi-layer system including inter-ference effects.
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