{"title":"多电阻失配分析","authors":"P. Beow Yew Tan, A. Victor Kordesch, O. Sidek","doi":"10.1109/SMELEC.2006.380795","DOIUrl":null,"url":null,"abstract":"In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of Poly Resistor Mismatch\",\"authors\":\"P. Beow Yew Tan, A. Victor Kordesch, O. Sidek\",\"doi\":\"10.1109/SMELEC.2006.380795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.
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