不同环境温度下双向SEPIC-ZETA DC-DC变换器的性能评价

Nuha Al-obaidi, Hasan Fahad Khazaal, Riyadh A. Abbas
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摘要

双向DC-DC转换器允许在两个电源之间以任何方向传输功率。这些转换器越来越多地应用于各种应用,包括电池充电器和充电器、储能设备、电动汽车电机驱动器、飞机动力系统、电信电源等,因为它们能够逆转功率流的方向。其中一种基本类型的双向DC-DC转换器是SEPIC-ZETA转换器。本文研究了采用MOSFET功率开关时该变换器的结构。此外,通过使用两个MOSFET模型(UJ3C065080K3S和SCT50N120),采用基于环境温度(25°C至40°C)的电热分析。研究显示了使用不同的MOSFET模型对功率损耗和热分析的影响。仿真结果表明,转发模式下MOSFET结温为151.38℃,T = 40℃时第一模型(UJ3C065080K3S)结温为158.5℃,反向模式下MOSFET结温为158.5℃。在第二种型号(SCT50N120)中,在相同的T = 40℃下,转发模式下MOSFET结温超过130.6℃。当变换器反向工作时,其结温为128.7℃。双向SEPIC-ZETA转换器在第二种型号的MOSFET (SCT50N120)中表现更好。
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Performance Evaluation of Bidirectional SEPIC-ZETA DC-DC Converter with Different Ambient Temperature
Bidirectional DC-DC converters allow power to be transferred in any direction between two electrical sources. These converters are increasingly employed in a variety of applications, including battery chargers and dischargers, energy storage devices, electrical vehicle motor drives, aircraft power systems, telecom power supplies, and others, due to their ability to reverse the direction of power flow. One of these basic types of bidirectional DC-DC converters is the SEPIC-ZETA converter. In this paper, the structure of this converter has been studied when MOSFET power switches are employed. Also, an electrical thermal analysis, which is based on the ambient temperature (between 25 °C and 40 °C), has been employed by using two MOSFET models (UJ3C065080K3S and SCT50N120). The study shows the effects of utilizing different MOSFET models on power losses and thermal analysis. According to the simulation results, the junction temperature of the MOSFET was 151.38 °C in the forwarding mode and for the first model (UJ3C065080K3S) at T = 40 °C, while the MOSFET junction temperature was 158.5 °C in the backward mode. In the second model (SCT50N120) and at the same T = 40°C, the MOSFET junction temperature exceeds 130.6°C in the forwarding mode. When the converter was operating in backward mode, its junction temperature was 128.7 °C. The bidirectional SEPIC-ZETA converter performs better in the second model of the MOSFET (SCT50N120).
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