基于忆阻器的三维神经形态计算系统及其在联想记忆学习中的应用

Hongyu An, Zhen Zhou, Yang Yi
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引用次数: 9

摘要

3D集成技术为绕过摩尔定律提供了一种短期策略。将三维集成应用于神经形态计算(NC)可以提供低功耗、高连接和大规模并行处理的系统,以适应高要求的计算任务。本文提出了一种新颖的模拟尖峰纳米级三维数控系统,其中神经元和突触都是三维堆叠的,采用单片层间通孔(MIV)技术和垂直电阻随机存取存储器(V-RRAM)结构。将该系统应用于联想记忆学习,以证明其在高要求计算任务中的能力。验证了该体系结构的计算效率和性能改进。
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Memristor-based 3D neuromorphic computing system and its application to associative memory learning
3D integration technology offers a near term strategy for bypassing Moore's Law. Applying 3D integration to neuromorphic computing (NC) could provide a low power consumption, high-connectivity, and massively parallel processed system that can accommodate high demand computational tasks. This paper proposes a novel analog spiking nanoscale 3D NC system, wherein both neurons and synapses are stacked three-dimensionally, with monolithic inter-tier via (MIV) technology, and vertical resistive random-access memory (V-RRAM) structures. An application of the proposed system to associative memory learning is performed to demonstrate its capability in high demand computational tasks. The computational efficiency and performance improvement of the proposed architecture are demonstrated.
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