离子导电半导体玻璃AgGeAsSe3原子结构的碎片模型

IF 0.8 4区 材料科学 Q4 MATERIALS SCIENCE, CERAMICS Glass Physics and Chemistry Pub Date : 2023-11-16 DOI:10.1134/S1087659623600497
K. B. Aleinikova, E. N. Zinchenko, N. V. Melnikova
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摘要

基于单色铜和钼辐射的实验强度曲线,得到了玻璃体AgGeAsSe3的原子径向分布函数,并在整个有序区(~9 Å)用碎片模型进行了解释。结果表明,该玻璃由硒和硒砷四面体组成,内部有锗和银原子。这种四面体在玻璃中有序区域内的空间排列与GeAsSe和GeSe2结构中的排列相似。提出这些结构碎片的“开放式”结构允许Ag+离子(离子电导率)在玻璃体AgGeAsSe3中运动。在所研究的玻璃中没有发现离子导电化合物Ag2Se结构的碎片。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

The atomic radial distribution function of vitreous AgGeAsSe3, obtained based on the experimental intensity curves taken with monochromatic copper and molybdenum radiation, is interpreted using a fragmentary model in the entire ordering region (~9 Å). It is shown that the glass consists of selenium and selenium-arsenic tetrahedra with germanium and silver atoms inside. The spatial arrangement of such tetrahedra in glass within the ordering region is similar to their arrangement in the GeAsSe and GeSe2 structures. It is proposed that the “openwork” structure of the fragments of these structures allows the movement of Ag+ ions (ionic conductivity) in vitreous AgGeAsSe3. Fragments of the structure of the ion-conducting compound Ag2Se are not found in the studied glass.

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来源期刊
Glass Physics and Chemistry
Glass Physics and Chemistry 工程技术-材料科学:硅酸盐
CiteScore
1.20
自引率
14.30%
发文量
46
审稿时长
6-12 weeks
期刊介绍: Glass Physics and Chemistry presents results of research on the inorganic and physical chemistry of glass, ceramics, nanoparticles, nanocomposites, and high-temperature oxides and coatings. The journal welcomes manuscripts from all countries in the English or Russian language.
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