用于半导体缺陷检测的基于多尺度残留聚合网络的新型图像超分辨率算法

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Semiconductor Manufacturing Pub Date : 2023-10-26 DOI:10.1109/TSM.2023.3327767
Yang Liu;Lilei Hu;Bin Sun;Can Ma;Jingxuan Shen;Chang Chen
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引用次数: 0

摘要

单图像超分辨率(SISR)技术已在半导体缺陷检测领域得到广泛应用。增强图像分辨率对提高检测灵敏度和准确性具有重要意义。本研究提出了一种名为交叉卷积残差网络(CCRN)的新型 SISR 算法。CCRN 包括一个交叉卷积模块(CCM),其中包含一个交叉共享机制,可促进不同阶段特征的融合,从而从图像中提取更多信息。此外,还引入了全局残差聚合结构(GRA)。GRA 可捕捉并将从学习每个 CCM 中获取的不同层次的残差特征传输到重建层。实验结果表明,当应用于微流控芯片、CMOS 图像传感器和量子点的光学、扫描电镜和 TEM 图像时,所提出的 SR 算法在视觉和定量指标方面都优于现有的一流 SR 算法。此外,在使用 WM-811K 数据集进行评估时,CCRN 显著提高了缺陷分类和无图案晶片检测的准确性。值得注意的是,局部缺陷检测准确率从 79.00% 提高到 89.00%,分类准确率从 93.69% 提高到 96.06%。这些发现强调了拟议算法在提高半导体缺陷检测和分类准确性方面的潜在应用。
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A Novel Multiscale Residual Aggregation Network-Based Image Super-Resolution Algorithm for Semiconductor Defect Inspection
Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies.
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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