偏置场自由自旋霍尔纳米振荡器中的可重构神经尖峰

Sourabh Manna, Rohit Medwal, Rajdeep Singh Rawat
{"title":"偏置场自由自旋霍尔纳米振荡器中的可重构神经尖峰","authors":"Sourabh Manna, Rohit Medwal, Rajdeep Singh Rawat","doi":"10.1103/physrevb.108.184411","DOIUrl":null,"url":null,"abstract":"In this paper, we theoretically investigate neuronlike spiking dynamics in an elliptic ferromagnet (FM)/heavy metal bilayer-based spin Hall nano-oscillator (SHNO) in a bias field free condition, very suitable for practical realization of brain-inspired computing schemes. We demonstrate regular periodic spiking with tunable frequency as well as the leaky integrate-and-fire (LIF) behavior in a single SHNO by manipulating the pulse features of input current. The frequency of regular periodic spiking is tunable in a range of 0.5--0.96 GHz (460 MHz bandwidth) through adjusting the magnitude of constant input DC current density. We further demonstrate the reconfigurability of spiking dynamics in response to a time-varying input accomplished by continuously increasing the input current density as a linear function of time. Macrospin theory and micromagnetic simulation provide insight into the origin of bias field free auto-oscillation and the spiking phenomena in our SHNO. In addition, we discuss how the shape anisotropy of the elliptic FM influence the bias field free auto-oscillation characteristics, including threshold current, frequency, and transition from in-plane to out-of-plane precession. The SHNO operates $<{10}^{12}\\phantom{\\rule{0.16em}{0ex}}\\mathrm{A}/{\\mathrm{m}}^{2}$ input current density and exhibits a large auto-oscillation amplitude, ensuring high output power. We show that the threshold current density can be reduced by decreasing the ellipticity of the FM layer as well as enhancing the perpendicular magnetic anisotropy. These findings highlight the potential of bias field free elliptic SHNO in designing power-efficient spiking neuron-based neuromorphic hardware.","PeriodicalId":20121,"journal":{"name":"Physical Review","volume":"41 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reconfigurable neural spiking in bias field free spin Hall nano-oscillator\",\"authors\":\"Sourabh Manna, Rohit Medwal, Rajdeep Singh Rawat\",\"doi\":\"10.1103/physrevb.108.184411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we theoretically investigate neuronlike spiking dynamics in an elliptic ferromagnet (FM)/heavy metal bilayer-based spin Hall nano-oscillator (SHNO) in a bias field free condition, very suitable for practical realization of brain-inspired computing schemes. We demonstrate regular periodic spiking with tunable frequency as well as the leaky integrate-and-fire (LIF) behavior in a single SHNO by manipulating the pulse features of input current. The frequency of regular periodic spiking is tunable in a range of 0.5--0.96 GHz (460 MHz bandwidth) through adjusting the magnitude of constant input DC current density. We further demonstrate the reconfigurability of spiking dynamics in response to a time-varying input accomplished by continuously increasing the input current density as a linear function of time. Macrospin theory and micromagnetic simulation provide insight into the origin of bias field free auto-oscillation and the spiking phenomena in our SHNO. In addition, we discuss how the shape anisotropy of the elliptic FM influence the bias field free auto-oscillation characteristics, including threshold current, frequency, and transition from in-plane to out-of-plane precession. The SHNO operates $<{10}^{12}\\\\phantom{\\\\rule{0.16em}{0ex}}\\\\mathrm{A}/{\\\\mathrm{m}}^{2}$ input current density and exhibits a large auto-oscillation amplitude, ensuring high output power. We show that the threshold current density can be reduced by decreasing the ellipticity of the FM layer as well as enhancing the perpendicular magnetic anisotropy. These findings highlight the potential of bias field free elliptic SHNO in designing power-efficient spiking neuron-based neuromorphic hardware.\",\"PeriodicalId\":20121,\"journal\":{\"name\":\"Physical Review\",\"volume\":\"41 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physical Review\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1103/physrevb.108.184411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/physrevb.108.184411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文从理论上研究了椭圆型铁磁体(FM)/重金属双层自旋霍尔纳米振荡器(SHNO)在无偏置场条件下的类神经元脉冲动力学,该振荡器非常适合于脑启发计算方案的实际实现。通过控制输入电流的脉冲特性,我们展示了在单个SHNO中具有可调频率的规则周期性尖峰以及漏积起火(LIF)行为。通过调节恒定输入直流电流密度的大小,可以在0.5—0.96 GHz (460 MHz带宽)范围内调节规则周期尖峰的频率。我们进一步证明了响应时变输入的尖峰动力学的可重构性,通过连续增加输入电流密度作为时间的线性函数来实现。宏自旋理论和微磁模拟揭示了我们的SHNO中无偏置场自振荡和尖峰现象的起源。此外,我们还讨论了椭圆调频的形状各向异性如何影响无偏置场的自振荡特性,包括阈值电流、频率以及从面内进动到面外进动的过渡。SHNO运行$<{10}^{12}\phantom{\rule{0.16em}{0ex}}\mathrm{A}/{\mathrm{m}}^{2}$输入电流密度,具有较大的自振荡幅度,保证了高输出功率。结果表明,通过减小调频层的椭圆度和提高垂直磁各向异性可以降低阈值电流密度。这些发现强调了无偏置场的椭圆SHNO在设计高能效的基于尖峰神经元的神经形态硬件方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Reconfigurable neural spiking in bias field free spin Hall nano-oscillator
In this paper, we theoretically investigate neuronlike spiking dynamics in an elliptic ferromagnet (FM)/heavy metal bilayer-based spin Hall nano-oscillator (SHNO) in a bias field free condition, very suitable for practical realization of brain-inspired computing schemes. We demonstrate regular periodic spiking with tunable frequency as well as the leaky integrate-and-fire (LIF) behavior in a single SHNO by manipulating the pulse features of input current. The frequency of regular periodic spiking is tunable in a range of 0.5--0.96 GHz (460 MHz bandwidth) through adjusting the magnitude of constant input DC current density. We further demonstrate the reconfigurability of spiking dynamics in response to a time-varying input accomplished by continuously increasing the input current density as a linear function of time. Macrospin theory and micromagnetic simulation provide insight into the origin of bias field free auto-oscillation and the spiking phenomena in our SHNO. In addition, we discuss how the shape anisotropy of the elliptic FM influence the bias field free auto-oscillation characteristics, including threshold current, frequency, and transition from in-plane to out-of-plane precession. The SHNO operates $<{10}^{12}\phantom{\rule{0.16em}{0ex}}\mathrm{A}/{\mathrm{m}}^{2}$ input current density and exhibits a large auto-oscillation amplitude, ensuring high output power. We show that the threshold current density can be reduced by decreasing the ellipticity of the FM layer as well as enhancing the perpendicular magnetic anisotropy. These findings highlight the potential of bias field free elliptic SHNO in designing power-efficient spiking neuron-based neuromorphic hardware.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Supersonic friction of a black hole traversing a self-interacting scalar dark matter cloud Analysis of loss correction with the Gottesman-Kitaev-Preskill code Radiation of optical angular momentum from a dipole source in a magneto-birefringent disordered environment Epistasis and pleiotropy shape biophysical protein subspaces associated with drug resistance Nonequilibrium steady states in coupled asymmetric and symmetric exclusion processes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1