S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. Alhazmi, Syed Kashif Ali
{"title":"Ar:O2气体比对溅射沉积la2o3掺杂ZnO薄膜结构和光学性能的影响","authors":"S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. Alhazmi, Syed Kashif Ali","doi":"10.1088/1361-6641/acfe91","DOIUrl":null,"url":null,"abstract":"Abstract Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O 2 gas flow variation on the deposition of La 2 O 3 -doped zinc oxide thin films (TFs) on silicon dioxide (SiO 2 ) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La 2 O 3 -doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La 2 O 3 -doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La 2 O 3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O 2 ) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La 2 O 3 -doped ZnO TFs, specifically for their application in solar thermal systems.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"93 1","pages":"0"},"PeriodicalIF":1.9000,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films\",\"authors\":\"S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. 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A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. 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The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films
Abstract Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O 2 gas flow variation on the deposition of La 2 O 3 -doped zinc oxide thin films (TFs) on silicon dioxide (SiO 2 ) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La 2 O 3 -doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La 2 O 3 -doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La 2 O 3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O 2 ) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La 2 O 3 -doped ZnO TFs, specifically for their application in solar thermal systems.
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.