一种用于数字电路的新型高速低功耗感测放大器触发器

IF 0.8 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230446
Ang Yuan, Huidong Zhao, Zhi Li, Shushan Qiao
{"title":"一种用于数字电路的新型高速低功耗感测放大器触发器","authors":"Ang Yuan, Huidong Zhao, Zhi Li, Shushan Qiao","doi":"10.1587/elex.20.20230446","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel sense-amplifier-based flip-flop (SAFF) applied in low-power, high-speed operation. With the employment of the pre-charge control technique and shut-off transistor, the power and delay of the proposed SAFF are significantly reduced. Furthermore, the proposed SAFF can provide low-voltage operation. Post-layout simulation results based on the SMIC 55 nm CMOS process show that the proposed SAFF achieves a 28.9% reduction in the CLK-to-Q delay and a 53.2% decrease in power (25% input data switching activity) and the power-delay-product of the proposed SAFF shows 3.0× improvement compared with the conventional SAFF.","PeriodicalId":50387,"journal":{"name":"Ieice Electronics Express","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel high-speed low-power sense-amplifier-based flip-flop for digital circuits application\",\"authors\":\"Ang Yuan, Huidong Zhao, Zhi Li, Shushan Qiao\",\"doi\":\"10.1587/elex.20.20230446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a novel sense-amplifier-based flip-flop (SAFF) applied in low-power, high-speed operation. With the employment of the pre-charge control technique and shut-off transistor, the power and delay of the proposed SAFF are significantly reduced. Furthermore, the proposed SAFF can provide low-voltage operation. Post-layout simulation results based on the SMIC 55 nm CMOS process show that the proposed SAFF achieves a 28.9% reduction in the CLK-to-Q delay and a 53.2% decrease in power (25% input data switching activity) and the power-delay-product of the proposed SAFF shows 3.0× improvement compared with the conventional SAFF.\",\"PeriodicalId\":50387,\"journal\":{\"name\":\"Ieice Electronics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ieice Electronics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.20.20230446\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Electronics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.20.20230446","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种用于低功耗、高速运行的基于传感器放大器的触发器(SAFF)。由于采用了预充电控制技术和关断晶体管,所提出的SAFF的功率和延迟显著降低。此外,所提出的SAFF可以提供低压运行。基于中芯国际55nm CMOS工艺的布局后仿真结果表明,与传统SAFF相比,该SAFF的CLK-to-Q延迟降低了28.9%,功率降低了53.2%(输入数据切换活动降低了25%),功率延迟积提高了3.0倍。
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A novel high-speed low-power sense-amplifier-based flip-flop for digital circuits application
This paper proposes a novel sense-amplifier-based flip-flop (SAFF) applied in low-power, high-speed operation. With the employment of the pre-charge control technique and shut-off transistor, the power and delay of the proposed SAFF are significantly reduced. Furthermore, the proposed SAFF can provide low-voltage operation. Post-layout simulation results based on the SMIC 55 nm CMOS process show that the proposed SAFF achieves a 28.9% reduction in the CLK-to-Q delay and a 53.2% decrease in power (25% input data switching activity) and the power-delay-product of the proposed SAFF shows 3.0× improvement compared with the conventional SAFF.
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来源期刊
Ieice Electronics Express
Ieice Electronics Express 工程技术-工程:电子与电气
CiteScore
1.50
自引率
37.50%
发文量
119
审稿时长
1.1 months
期刊介绍: An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications
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