电沉积法制备SnS纳米结构的成核与生长研究

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-11-10 DOI:10.15251/cl.2023.2010.753
A. Nouri, D. Dekhil, H. Guessas
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引用次数: 0

摘要

采用电沉积技术在0.1M SnSO4和Na2SO4水溶液中制备了SnS纳米结构。测试了0.05M、0.1 m、0.15M三种浓度的Na2SO4。利用循环伏安法、计时安培法、扫描电镜和x射线衍射技术研究了在ITO衬底上电沉积SnS纳米结构的过程。利用电流瞬态分析了电沉积SnS的成核和生长机制。在0.05M和0.10 M浓度下,SnS薄膜以瞬时成核方式三维生长。当浓度为0.15M时,SnS薄膜从渐进式成核开始,然后转变为瞬时成核模式。制备的SnS纳米结构为多晶正交结构。XRD测试结果表明,在较低浓度下,SnS纳米结构的优先取向是(111)和(101)方向。SEM图像显示了样品的三维生长模型,与电化学分析结果一致。
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Nucleation and growth study of SnS nanostructures prepared by electrodeposition method
SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous nucleation mode. The SnS nanostructures produced were found to be polycrystalline with an orthorhombic structure. XRD measurement shows that the preferred orientation of SnS nanostructures is in the (111) and (101) directions for the lower concentrations. SEM images reveal the 3D growth model of the samples, which is consistent with the electrochemical analysis.
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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