Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.733
M. H. Mustafa, H. M. Ali, G. S. Ahmed, B. H. Hussein
We studied at the morphology, structural setup, and optical characteristics of thin cadmium (CdSe) films a thickness of 250 nm that were created by thermal evaporation over glass, The films exhibited a hexagonal shape were crystalline, and tended to form grains in the (111) crystallographic direction, according to the X-ray diffraction examinations. These characteristics were established using the investigation's findings. Through the use of thin films of CdSe doped with Ag at a concentration of 1.5%, the crystal structure orientations for pure CdSe (25.32, 41.84) and CdSe:Ag (25.39, 41.01) that were both pure as well as those that were doped with silver were both determined. The band gap of the optical spectrum decreased by 1.93–1.81 eV (300–700 nm). This reduced the rate of absorption measuring the current-voltage properties of heterojunctions made from a range of clean and doped materials with an incident electrical power density of (100 mW/cm2 ). The films' hexagonal structure was revealed by the X-ray investigation, and grain development was driven by the (220,111) crystallographic direction.
{"title":"Enhancement efficiency of cadmium selenium solar cell by doping within silver","authors":"M. H. Mustafa, H. M. Ali, G. S. Ahmed, B. H. Hussein","doi":"10.15251/cl.2023.2010.733","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.733","url":null,"abstract":"We studied at the morphology, structural setup, and optical characteristics of thin cadmium (CdSe) films a thickness of 250 nm that were created by thermal evaporation over glass, The films exhibited a hexagonal shape were crystalline, and tended to form grains in the (111) crystallographic direction, according to the X-ray diffraction examinations. These characteristics were established using the investigation's findings. Through the use of thin films of CdSe doped with Ag at a concentration of 1.5%, the crystal structure orientations for pure CdSe (25.32, 41.84) and CdSe:Ag (25.39, 41.01) that were both pure as well as those that were doped with silver were both determined. The band gap of the optical spectrum decreased by 1.93–1.81 eV (300–700 nm). This reduced the rate of absorption measuring the current-voltage properties of heterojunctions made from a range of clean and doped materials with an incident electrical power density of (100 mW/cm2 ). The films' hexagonal structure was revealed by the X-ray investigation, and grain development was driven by the (220,111) crystallographic direction.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.709
R. Ranjan, C. M. S. Negi, S. K. Choubey, K. P. Tiwary
Manganese-doped cadmium sulphide semiconductor nanoparticles (CdS: Mn) NPs have been created utilizing a microwave-assisted solvothermal technique at different Mn concentrations (0, 1%, 3%, and 5%). The chemicals utilized for the preparation of Mndoped CdS nanoparticles were sodium sulphide (Na2S.xH2O), manganese chloride (MnCl2.4H2O), and cadmium acetate (CH3COO)2Cd., H2O). To determine the structural dimensions of the generated nanoparticles, the Debye-Scherer equation was used to calculate the average crystallite size at the full-width half maximum (FWHM) of the diffraction peaks. FTIR spectra analysis was used to look at the various functional and vibrational groups present in the Mn-doped CdS nanoparticle sample. The structure features of the produced nanoparticles have been examined using X-ray diffraction patterns. Energy dispersive X-rays were employed to ascertain the chemical composition of the synthesized nanoparticles. The optical properties and quantification of the energy band gap of the nanoparticles have been done using UV-V spectroscopy. According to XRD calculations, the cubic zinc-blend structure of the generated NPs had a crystal size of between 4 and 7 nm. By using EDX spectroscopy, the incorporation of Mn at the CdS lattice was confirmed.
{"title":"Study of structural, morphological and optical properties of Mn+2 doped CdS nanoparticles synthesized at various doping concentration","authors":"R. Ranjan, C. M. S. Negi, S. K. Choubey, K. P. Tiwary","doi":"10.15251/cl.2023.2010.709","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.709","url":null,"abstract":"Manganese-doped cadmium sulphide semiconductor nanoparticles (CdS: Mn) NPs have been created utilizing a microwave-assisted solvothermal technique at different Mn concentrations (0, 1%, 3%, and 5%). The chemicals utilized for the preparation of Mndoped CdS nanoparticles were sodium sulphide (Na2S.xH2O), manganese chloride (MnCl2.4H2O), and cadmium acetate (CH3COO)2Cd., H2O). To determine the structural dimensions of the generated nanoparticles, the Debye-Scherer equation was used to calculate the average crystallite size at the full-width half maximum (FWHM) of the diffraction peaks. FTIR spectra analysis was used to look at the various functional and vibrational groups present in the Mn-doped CdS nanoparticle sample. The structure features of the produced nanoparticles have been examined using X-ray diffraction patterns. Energy dispersive X-rays were employed to ascertain the chemical composition of the synthesized nanoparticles. The optical properties and quantification of the energy band gap of the nanoparticles have been done using UV-V spectroscopy. According to XRD calculations, the cubic zinc-blend structure of the generated NPs had a crystal size of between 4 and 7 nm. By using EDX spectroscopy, the incorporation of Mn at the CdS lattice was confirmed.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.741
T. X. Liu, C. A. Guo, F. S. Lu, X. Y. Zhang, L. Zhang, Z. J. Wang, Z. Y. Xu, G. L. Zhu
Electrospark deposition coatings were prepared with different deposition voltage on CrNi3MoVA steel substrates by using a W-WS2 sintered electrode and their tribological properties were investigated. The microhardness, roughness and tribological properties of the coatings were tested by using Vickers hardness tester, confocal laser scanning microscope and tribometer, and the morphologies, composition and phase structure were obtained by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that with the increase of deposition voltage, the hardness and roughness of the coatings increase. The coatings remarkably increase the tribological properties of CrNi3MoVA steel, and among the three coatings deposited at 40 V, 60 V and 80 V, the coating deposited at 60 V has the smallest friction coefficient and the best wear resistance.
{"title":"Influence of deposition voltage on tribological properties of W-WS2 coatings deposited by electrospark deposition","authors":"T. X. Liu, C. A. Guo, F. S. Lu, X. Y. Zhang, L. Zhang, Z. J. Wang, Z. Y. Xu, G. L. Zhu","doi":"10.15251/cl.2023.2010.741","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.741","url":null,"abstract":"Electrospark deposition coatings were prepared with different deposition voltage on CrNi3MoVA steel substrates by using a W-WS2 sintered electrode and their tribological properties were investigated. The microhardness, roughness and tribological properties of the coatings were tested by using Vickers hardness tester, confocal laser scanning microscope and tribometer, and the morphologies, composition and phase structure were obtained by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that with the increase of deposition voltage, the hardness and roughness of the coatings increase. The coatings remarkably increase the tribological properties of CrNi3MoVA steel, and among the three coatings deposited at 40 V, 60 V and 80 V, the coating deposited at 60 V has the smallest friction coefficient and the best wear resistance.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"61 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135092105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.753
A. Nouri, D. Dekhil, H. Guessas
SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous nucleation mode. The SnS nanostructures produced were found to be polycrystalline with an orthorhombic structure. XRD measurement shows that the preferred orientation of SnS nanostructures is in the (111) and (101) directions for the lower concentrations. SEM images reveal the 3D growth model of the samples, which is consistent with the electrochemical analysis.
{"title":"Nucleation and growth study of SnS nanostructures prepared by electrodeposition method","authors":"A. Nouri, D. Dekhil, H. Guessas","doi":"10.15251/cl.2023.2010.753","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.753","url":null,"abstract":"SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous nucleation mode. The SnS nanostructures produced were found to be polycrystalline with an orthorhombic structure. XRD measurement shows that the preferred orientation of SnS nanostructures is in the (111) and (101) directions for the lower concentrations. SEM images reveal the 3D growth model of the samples, which is consistent with the electrochemical analysis.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.697
M. Guenfoud, M. Hamouda
Recently, BiCuTeO is considered as one of the promising thermoelectric materials due to its ultra-low thermal conductivity. For this reason, the thermoelectric characteristic of this material has been studied to evaluate the lattice thermal conductivity (𝜅𝜅𝐿𝐿) from firstprinciples calculations which are based on solving linearized Boltzmann transport equations (LBTE) through the relaxation time (RTA) approximation. These calculations are used to predict the behavior of phonons in order to understand the origin of the ultralow thermal conductivity of BiCuTeO. The lattice thermal conductivity of BiCuTeO is reproduced with high accuracy. Our calculations predict that BiCuTeO announces a strong anharmonicity, which is the cause of the very low value of the thermal conductivity. This results in very high group speeds. Moreover, the calculations of the elastic properties, dielectric constants, phonon group velocities, lifetimes, and Grüneisen parameters shows that the lattice thermal conductivity exhibits an obvious anisotropy.
{"title":"Thermal conductivity and lattice dynamics of thermoelectric oxychalcogenide BiCuTeO","authors":"M. Guenfoud, M. Hamouda","doi":"10.15251/cl.2023.2010.697","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.697","url":null,"abstract":"Recently, BiCuTeO is considered as one of the promising thermoelectric materials due to its ultra-low thermal conductivity. For this reason, the thermoelectric characteristic of this material has been studied to evaluate the lattice thermal conductivity (𝜅𝜅𝐿𝐿) from firstprinciples calculations which are based on solving linearized Boltzmann transport equations (LBTE) through the relaxation time (RTA) approximation. These calculations are used to predict the behavior of phonons in order to understand the origin of the ultralow thermal conductivity of BiCuTeO. The lattice thermal conductivity of BiCuTeO is reproduced with high accuracy. Our calculations predict that BiCuTeO announces a strong anharmonicity, which is the cause of the very low value of the thermal conductivity. This results in very high group speeds. Moreover, the calculations of the elastic properties, dielectric constants, phonon group velocities, lifetimes, and Grüneisen parameters shows that the lattice thermal conductivity exhibits an obvious anisotropy.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.751
M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova
{"title":"Retraction notice: Optimization of chemical bath deposited CdSSe thin films","authors":"M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova","doi":"10.15251/cl.2023.2010.751","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.751","url":null,"abstract":"","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.15251/cl.2023.2010.725
O. V. Iaseniuc, M. S. Iovu
In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.
本文用光电方法研究了As-S-Sb-Te体系中一些纳米结构的四元硫族化合物。在顶铝照射电极的正负极性处，记录了稳态光电流Iph=(λ)的光谱分布和光电流Iph=(t)的弛豫曲线。在稳态光电流的光谱分布中，在λ=0.50÷0.92 mm (2.48÷1.35 eV)波长范围内，As1.17S2.7Sb0.83Te0.40、As1.04S2.4Sb0.96Te0.60、As0.63S2.7Sb1.37Te0.30和As0.56S2.4Sb1.44Te0.60等非晶态薄膜的光电流存在最大值，这是As2S3、Sb2S3和Sb2S3双星团簇存在的结果。利用光伏法得到带隙宽度的值，约为Eg =1.41 eV。
{"title":"Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films","authors":"O. V. Iaseniuc, M. S. Iovu","doi":"10.15251/cl.2023.2010.725","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.725","url":null,"abstract":"In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"56 16","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.15251/cl.2023.2011.759
M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban
This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.
{"title":"Effect of Cu ratios dopant on ZnSe thin films structural and optical properties","authors":"M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban","doi":"10.15251/cl.2023.2011.759","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.759","url":null,"abstract":"This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"2011 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.15251/cl.2023.2011.797
U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park
Wittichenite Cu3BiS3 thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu3BiS3 thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400 o C for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu3BiS3 with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and c = 0.674 nm. Films uniformity, compactness, and crystal grain size increased upon increasing the sulfurization duration. On increasing the sulfurization time, the elemental stoichiometry of the films improved, and the direct optical bandgap increased from 1.38 to 1.40 eV. Additionally, Cu3BiS3 films exhibited p-type electrical conductivity and the electrical resistivity decreased with the increasing sulfurization time. Consequently, the Cu3BiS3 films synthesized at 30- and 60-min sulfurization durations can be applied to thin-film solar cells.
Wittichenite Cu3BiS3 薄膜具有合适的光电特性，并含有丰富的地球无毒元素，因此作为光收集器受到广泛关注。我们采用两步法合成了 Cu3BiS3 薄膜；其中，Cu/Bi/Cu 金属叠层经热蒸发后，在石英管式炉中于 400 o C 下硫化 10-60 分钟。研究了硫化时间对薄膜结构、微观结构、成分、光学和电学特性的影响。结果表明，薄膜为正交菱形 Cu3BiS3，晶格参数如下：a = 0.768 nm；b = 1.043 nm；c = 0.674 nm。随着硫化时间的延长，薄膜的均匀性、致密性和晶粒尺寸都有所增加。随着硫化时间的延长，薄膜的元素化学计量得到改善，直接光带隙从 1.38 eV 增加到 1.40 eV。此外，Cu3BiS3 薄膜表现出 p 型导电性，电阻率随着硫化时间的延长而降低。因此，硫化时间分别为 30 分钟和 60 分钟的 Cu3BiS3 薄膜可应用于薄膜太阳能电池。
{"title":"Synthesis of wittichenite Cu3BiS3 thin films by sulfurizing thermally evaporated Cu-Bi metallic stacks","authors":"U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park","doi":"10.15251/cl.2023.2011.797","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.797","url":null,"abstract":"Wittichenite Cu3BiS3 thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu3BiS3 thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400 o C for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu3BiS3 with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and c = 0.674 nm. Films uniformity, compactness, and crystal grain size increased upon increasing the sulfurization duration. On increasing the sulfurization time, the elemental stoichiometry of the films improved, and the direct optical bandgap increased from 1.38 to 1.40 eV. Additionally, Cu3BiS3 films exhibited p-type electrical conductivity and the electrical resistivity decreased with the increasing sulfurization time. Consequently, the Cu3BiS3 films synthesized at 30- and 60-min sulfurization durations can be applied to thin-film solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"6 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139294476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.15251/cl.2023.2011.803
A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu
The polymer/67at %(As2S3)0,985(Bi2Se3)0,015:33 at.% As2Se3 structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown.
研究了用于 X 射线成像的聚合物/67%(As2S3)0,985(Bi2Se3)0,015:33% As2Se3 结构。结果表明，在钨阳极 X 射线管的 "白 "光谱辐射下，可以记录浮雕相图像。
{"title":"The structure polymer/As-Se-S doped by Bi for X-ray imaging","authors":"A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu","doi":"10.15251/cl.2023.2011.803","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.803","url":null,"abstract":"The polymer/67at %(As2S3)0,985(Bi2Se3)0,015:33 at.% As2Se3 structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"35 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139298618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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