{"title":"基于三槽功率合成器的30.5 dbm Psat和34.8% PAE的4.4-6.4 ghz紧凑型SiGe功率放大器","authors":"Wangyu Liu, Zonglin Ma, Kaixue Ma, Haipeng Fu","doi":"10.1587/elex.20.20230447","DOIUrl":null,"url":null,"abstract":"This letter presents a broadband compact watt-level high-efficiency power amplifier (PA) in 0.35-μm SiGe BiCMOS process. A four-way triple-tank-based power combiner is introduced and theoretically analyzed in detail with the consideration of the undesired inductor in the third tank. The coupling coefficient and the uncoupling resonant frequencies of the tanks can be adjusted to compensate for the deterioration caused by the undesired inductor, achieving broadband and low-loss matching. The proposed PA operates over 4.4-6.4 GHz and exhibits a peak gain of 35.2 dB, a maximum saturated output power (Psat) of 30.5 dBm, and a peak power added efficiency (PAE) of 34.8% at 5.4 GHz.","PeriodicalId":50387,"journal":{"name":"Ieice Electronics Express","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 4.4-6.4-GHz Compact SiGe Power Amplifier with 30.5-dBm Psat and 34.8% PAE Based on Triple-Tank Power Combiner\",\"authors\":\"Wangyu Liu, Zonglin Ma, Kaixue Ma, Haipeng Fu\",\"doi\":\"10.1587/elex.20.20230447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a broadband compact watt-level high-efficiency power amplifier (PA) in 0.35-μm SiGe BiCMOS process. A four-way triple-tank-based power combiner is introduced and theoretically analyzed in detail with the consideration of the undesired inductor in the third tank. The coupling coefficient and the uncoupling resonant frequencies of the tanks can be adjusted to compensate for the deterioration caused by the undesired inductor, achieving broadband and low-loss matching. The proposed PA operates over 4.4-6.4 GHz and exhibits a peak gain of 35.2 dB, a maximum saturated output power (Psat) of 30.5 dBm, and a peak power added efficiency (PAE) of 34.8% at 5.4 GHz.\",\"PeriodicalId\":50387,\"journal\":{\"name\":\"Ieice Electronics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ieice Electronics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.20.20230447\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Electronics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.20.20230447","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 4.4-6.4-GHz Compact SiGe Power Amplifier with 30.5-dBm Psat and 34.8% PAE Based on Triple-Tank Power Combiner
This letter presents a broadband compact watt-level high-efficiency power amplifier (PA) in 0.35-μm SiGe BiCMOS process. A four-way triple-tank-based power combiner is introduced and theoretically analyzed in detail with the consideration of the undesired inductor in the third tank. The coupling coefficient and the uncoupling resonant frequencies of the tanks can be adjusted to compensate for the deterioration caused by the undesired inductor, achieving broadband and low-loss matching. The proposed PA operates over 4.4-6.4 GHz and exhibits a peak gain of 35.2 dB, a maximum saturated output power (Psat) of 30.5 dBm, and a peak power added efficiency (PAE) of 34.8% at 5.4 GHz.
期刊介绍：
An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include:
- Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.)
- Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.)
- Electromagnetic theory
- Microwave and millimeter-wave devices, circuits, and modules
- THz devices, circuits and modules
- Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials)
- Integrated circuits (memory, logic, analog, RF, sensor)
- Power devices and circuits
- Micro- or nano-electromechanical systems
- Circuits and modules for storage
- Superconducting electronics
- Energy harvesting devices, circuits and modules
- Circuits and modules for electronic displays
- Circuits and modules for electronic instrumentation
- Devices, circuits and modules for IoT and biomedical applications
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
