低成本多元素粉末靶的溅射沉积

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY IEEE Open Journal of Nanotechnology Pub Date : 2023-10-27 DOI:10.1109/OJNANO.2023.3327997
Tamiko Ohshima
{"title":"低成本多元素粉末靶的溅射沉积","authors":"Tamiko Ohshima","doi":"10.1109/OJNANO.2023.3327997","DOIUrl":null,"url":null,"abstract":"Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities (\n<italic>ρ<sub>p</sub><sub>owder</sub></i>\n) ranging from 0.898 to 3.00 g/cm\n<sup>3</sup>\n. The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At \n<italic>ρ<sub>p</sub><sub>owder</sub></i>\n = 3.00 g/cm\n<sup>3</sup>\n, the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10\n<sup>−3</sup>\n Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10\n<sup>−3</sup>\n Ω\n<sup>−1</sup>\n for \n<italic>ρ<sub>p</sub><sub>owder</sub></i>\n = 3.00 g/cm\n<sup>3</sup>\n. This research contributes to Nagasaki University's goal of “planetary health”.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298617","citationCount":"0","resultStr":"{\"title\":\"Sputtering Deposition With Low Cost Multi-Element Powder Targets\",\"authors\":\"Tamiko Ohshima\",\"doi\":\"10.1109/OJNANO.2023.3327997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities (\\n<italic>ρ<sub>p</sub><sub>owder</sub></i>\\n) ranging from 0.898 to 3.00 g/cm\\n<sup>3</sup>\\n. The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At \\n<italic>ρ<sub>p</sub><sub>owder</sub></i>\\n = 3.00 g/cm\\n<sup>3</sup>\\n, the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10\\n<sup>−3</sup>\\n Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10\\n<sup>−3</sup>\\n Ω\\n<sup>−1</sup>\\n for \\n<italic>ρ<sub>p</sub><sub>owder</sub></i>\\n = 3.00 g/cm\\n<sup>3</sup>\\n. This research contributes to Nagasaki University's goal of “planetary health”.\",\"PeriodicalId\":446,\"journal\":{\"name\":\"IEEE Open Journal of Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2023-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298617\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10298617/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10298617/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

与固体靶相比,粉末靶具有成本低、元素组合范围广等优点。以质量分数为98:2 wt%的氧化锌和氧化铝粉为混合靶材,采用溅射沉积法制备了透明导电的掺铝氧化锌(AZO)薄膜。粉末靶材的堆积密度可以根据压制压力而变化。因此,采用体积密度为0.898 ~ 3.00 g/cm3的粉末靶材,在Si和蓝宝石衬底上制备了AZO薄膜。测试了制备的AZO薄膜的结构、电学和光学性能,并研究了目标体积密度与薄膜性能的关系。x射线衍射测量显示c轴ZnO(002)衍射峰,对应于垂直于衬底的晶体生长。霍尔效应测量结果显示,随着粉体靶体体积密度的增加,载流子密度和霍尔迁移率也随之增加。当ρpowder = 3.00 g/cm3时,Si衬底上的AZO薄膜的电阻率最低,为1.35 × 10−3 Ω·cm。紫外可见光谱测量表明,蓝宝石衬底上的AZO薄膜在可见光区的平均透过率超过80%。计算了其在光电器件中的潜在应用价值,得出ρ粉= 3.00 g/cm3时的值为6.37 × 10−3 Ω−1。这项研究有助于长崎大学实现“地球健康”的目标。
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Sputtering Deposition With Low Cost Multi-Element Powder Targets
Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities ( ρpowder ) ranging from 0.898 to 3.00 g/cm 3 . The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At ρpowder = 3.00 g/cm 3 , the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10 −3 Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10 −3 Ω −1 for ρpowder = 3.00 g/cm 3 . This research contributes to Nagasaki University's goal of “planetary health”.
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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