Spin Route Flipping in FeCo/RR-P3HT/ NiFe Organic Spin-Valve Device

An organic semiconductor (OSC) is a potential material in spintronics which is posses a long spin diffusion length due to its low spin-orbit coupling and hyperfine interaction. Among the OSC P3HT that already exists, in spintronic devices. In this report, An organic spin valve (OSV) device was fabricated using Regioregular Poly 3-hexylthiophene-2,5- diyl (RR-P3HT). The RR-P3HT was used as a spacer layer, with FeCo and NiFe used as bottom and top electrodes, respectively. The device magnetoresistance (MR) was observed to be a positive MR of 2.9% at 50 K while negative MR of 0.6, 0.4, and 0.014% were observed at 150, 200, and 300 K, respectively. Observed AMR is positive at room temperature for Feco and NiFe single layer as 0.08 and 0.18%, respectively. The magnetic electrodes were prepared using Ultra High Vacuum DC magnetron sputtering, and RR-P3HT was prepared using a spin coater. The magnetic properties of the device were studied by vibrating sample magnetometer (VSM) analysis. The VSM results conclude that both electrodes are magnetic materials with different coercive forces. The FeCo and NiFe, both electrodes crystal structures were analyzed from Gracing Incidence X-Ray Diffraction (GI-XRD) using Cobalt K alpha. FeCo and NiFe were the Body-Centered Cubic crystal structures, and the electrode’s JCPDS card numbers are 50–0795 and 37–0474, respectively.

Graphical Abstract