一个具有高线性输入缓冲器的12位2.32 GS/s流水线/SAR混合ADC

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230369

Xuehao Guo, Zhiyang Li, Hao Fang, Zelin Jia, Fuli Tian, Chunyi Song, Zhiwei Xu

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引用次数: 0

摘要

提出了一种基于28纳米CMOS的12位2.32 GS/s时交错流水线/逐次逼近寄存器(SAR)混合模数转换器(ADC)。为了在数GS/s下实现高线性度，提出了一种基于浮体技术的伪差分推拉输入缓冲器。采用双通道采样倍增数模转换器(MDAC)和一个共享闪存子adc的流水线/SAR混合架构，利用简单的校准。该ADC在1125MHz输入时的信噪比(SNDR)为55.68dB，无杂散动态范围(SFDR)为72.18dB，功耗为175 mW。

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A 12-bit 2.32 GS/s pipelined/SAR hybrid ADC with a high-linearity input buffer

This paper presents a 12-bit 2.32 GS/s time-interleaved pipelined/successive-approximation register (SAR) hybrid analog-to-digital converter (ADC) implemented in 28 nm CMOS. To achieve high-linearity at several GS/s, a pseudo-differential push-pull input buffer with floating-body technique is proposed. A pipelined/SAR hybrid architecture with dual-channel sampling multiplying digital-to-analog converter (MDAC) and one shared flash sub-ADC is used exploiting a simple calibration. The ADC achieves a signal-to-noise-and-distortion-ratio (SNDR) of 55.68dB and a spurious-free-dynamic-range (SFDR) of 72.18dB at 1125MHz input and consumes 175 mW.

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来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications