平面多元光电二极管响应元件的隔离

IF 1 Q3 PHYSICS, MULTIDISCIPLINARY East European Journal of Physics Pub Date : 2023-09-04 DOI:10.26565/2312-4334-2023-3-48
Mykola S. Kukurudziak
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引用次数: 0

摘要

在多元素硅p-i-n光电二极管的批量生产中,由于光电探测器有源元件之间的绝缘电阻降低而导致产品系统性报废的问题已经暴露出来。本工作的目的是研究绝缘电阻退化的原因,并建立避免这种现象的最佳方法。对三种绝缘方法进行了对比分析:经典的非导电衬底表面和介电层表面的绝缘;通过带有介电膜的介面凹槽进行绝缘;通过与衬底材料(在这种情况下,p+型)在有源元件之间的间隙中形成的表面泄漏通道等型的限制区域进行绝缘。研究发现,光电二极管有源元件间绝缘电阻恶化的原因是由于使用了高电阻率的硅,在Si-SiO2界面处存在导电反转通道。形成反转通道的一种机制是在热操作期间掩盖氧化物中的杂质(特别是磷)的重新分配及其向界面的扩散。由于硼偏析系数小于1,热处理过程中硼从硅向SiO2扩散是反转层形成的另一机制。在使用衬底非导电区域制造具有绝缘的样品时,观察到绝缘电阻随着技术路线的执行而减少(在每次后续操作之后,电阻降低)。可以通过减少热操作的持续时间来降低降解的程度。研究表明,减小掩蔽氧化物的厚度会导致绝缘电阻的降低。当使用台面技术时,可以通过消除高温氧化操作来增加绝缘电阻,事实上,由于在磷沉积过程中没有遮蔽涂层。通过在有源元件之间的间隙中采用p+型区域进行绝缘,可以获得最高的绝缘电阻值。在宽度为200 μm的间隙中形成这些宽度为100 μm的区域,使我们获得了25-30 MΩ的绝缘电阻。为了保证光电二极管有源元件的绝缘,该方法在工艺路线上增加了两个热操作。在形成掩蔽涂层之前,通过在整个硅表面掺杂低硼浓度,可以减少热操作的次数。
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Isolation of Responsive Elements of Planar Multi-Element Photodiodes
In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is to study the causes of insulation resistance degradation and to establish optimal methods for avoiding this phenomenon. A comparative analysis of three insulation methods was carried out: classical insulation by the surface of a non-conductive substrate and a dielectric layer; insulation by means of mesaprofile grooves with a dielectric film; insulation by means of areas of limitation of surface leakage channels isotypic with the substrate material (in this case, p+-type) formed in the gaps between active elements. The study found that the reason for the deterioration of the insulation resistance between the active elements of photodiodes is the presence of conductive inversion channels at the Si-SiO2 interface due to the use of silicon with high resistivity. One mechanism for the formation of inversion channels is the redistribution of impurities in the masking oxide (in particular, phosphorus) and their diffusion to the interface during thermal operations. Another mechanism for the formation of inversion layers is the diffusion of boron from silicon into SiO2 during heat treatment due to the fact that the boron segregation coefficient is less than one. In the manufacture of samples with insulation using non-conductive areas of the substrate, a decrease in insulation resistance was observed as the technological route was performed (after each subsequent operation, the resistance degraded). The degree of degradation can be reduced by reducing the duration of thermal operations. It has been shown that reducing the thickness of the masking oxide causes a decrease in insulation resistance. When using mesa-technology, it is possible to increase the insulation resistance by eliminating the high-temperature oxidation operation and, in fact, due to the absence of a masking coating during phosphorus deposition. Insulation by means of p+-type areas in the gaps between the active elements allows to obtain the highest insulation resistance values. The formation of these regions with a width of 100 μm in the gaps with a width of 200 μm allowed us to obtain an insulation resistance of 25-30 MΩ. To ensure the insulation of the active elements of photodiodes by this method, two thermal operations are added to the technological route. The number of thermal operations can be reduced by doping the entire silicon surface with a low boron concentration before forming a masking coating.
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来源期刊
East European Journal of Physics
East European Journal of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.10
自引率
25.00%
发文量
58
审稿时长
8 weeks
期刊最新文献
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