空气和真空退火对直流磁控溅射制备的未掺杂氧化锌薄膜高导电和透明性能的影响

Lamia Radjehi, Linda Aissani, Abdelkader Djelloul, Abdenour Saoudi, Salim Lamri, Komla Nomenyo, Gilles Lerondel, Frédéric Sanchette
{"title":"空气和真空退火对直流磁控溅射制备的未掺杂氧化锌薄膜高导电和透明性能的影响","authors":"Lamia Radjehi, Linda Aissani, Abdelkader Djelloul, Abdenour Saoudi, Salim Lamri, Komla Nomenyo, Gilles Lerondel, Frédéric Sanchette","doi":"10.56801/mme889","DOIUrl":null,"url":null,"abstract":"In this study, we aim to investigate the effect of zinc interstitials (Zni) and oxygen vacancies (VO) on the ZnO electrical conductivity. ZnO films were synthesized via DC magnetron sputtering process using pure Zn target in gases mixture of Ar/O2 = 80/17.5 (sccm). In order to improve the optical and electrical prosperities, the obtained films were subjected to air and vacuum annealing treatment. Several techniques such as field emission scanning electron microscopy (FESEM), Grazing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy, photoluminescence spectroscopy (PL) and UV-visible were used to study the influence of heat treatment on structural and physical properties of ZnO films. Electrical conductivity of ZnO thin films was determined by measuring the sheet resistance and thickness of the films. XRD results confirm the synthesis of annealed ZnO films of the hexagonal structure with a preferential orientation along the (002) plane. The average crystallite size is altered between 22.6 to 28.4 nm dependent on the plan orientation of the ZnO film. Morphology and crystallinity of the ZnO structure could efficiently control the transmittance, electrical resistivity and optical band gap. As deposited ZnO film showed a lower electrical resistivity of 2.72×10-3 Ωcm due to the Zn-rich conditions. Under vacuum annealing, a combination of low resistivity (1.17×10-2 Ωcm) and better optical transmittance (87 %) are obtained. ZnO films developed in this study with high transmittance and low resistivity and good electro-optical quality supports their use in transparent and conductive electrode applications. The plan presentation was visualized using Vesta, with the lattice parameter set as follows: a = b = 3.249 Å; c = 5.207 Å; α = β = 90°; γ = 120°. Based on the construction and optimization of primitive cells, the supercells were constructed and then optimized. Finally, (002) and (103) planes were cut and the planar supercell structure was constructed. In order to make a plane representation for the solid bulk with 10 Å of thickness.","PeriodicalId":18466,"journal":{"name":"Metallurgical and Materials Engineering","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering\",\"authors\":\"Lamia Radjehi, Linda Aissani, Abdelkader Djelloul, Abdenour Saoudi, Salim Lamri, Komla Nomenyo, Gilles Lerondel, Frédéric Sanchette\",\"doi\":\"10.56801/mme889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we aim to investigate the effect of zinc interstitials (Zni) and oxygen vacancies (VO) on the ZnO electrical conductivity. ZnO films were synthesized via DC magnetron sputtering process using pure Zn target in gases mixture of Ar/O2 = 80/17.5 (sccm). In order to improve the optical and electrical prosperities, the obtained films were subjected to air and vacuum annealing treatment. Several techniques such as field emission scanning electron microscopy (FESEM), Grazing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy, photoluminescence spectroscopy (PL) and UV-visible were used to study the influence of heat treatment on structural and physical properties of ZnO films. Electrical conductivity of ZnO thin films was determined by measuring the sheet resistance and thickness of the films. XRD results confirm the synthesis of annealed ZnO films of the hexagonal structure with a preferential orientation along the (002) plane. The average crystallite size is altered between 22.6 to 28.4 nm dependent on the plan orientation of the ZnO film. Morphology and crystallinity of the ZnO structure could efficiently control the transmittance, electrical resistivity and optical band gap. As deposited ZnO film showed a lower electrical resistivity of 2.72×10-3 Ωcm due to the Zn-rich conditions. Under vacuum annealing, a combination of low resistivity (1.17×10-2 Ωcm) and better optical transmittance (87 %) are obtained. ZnO films developed in this study with high transmittance and low resistivity and good electro-optical quality supports their use in transparent and conductive electrode applications. The plan presentation was visualized using Vesta, with the lattice parameter set as follows: a = b = 3.249 Å; c = 5.207 Å; α = β = 90°; γ = 120°. Based on the construction and optimization of primitive cells, the supercells were constructed and then optimized. Finally, (002) and (103) planes were cut and the planar supercell structure was constructed. In order to make a plane representation for the solid bulk with 10 Å of thickness.\",\"PeriodicalId\":18466,\"journal\":{\"name\":\"Metallurgical and Materials Engineering\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Metallurgical and Materials Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56801/mme889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Metallurgical and Materials Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56801/mme889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

在这项研究中,我们的目的是研究锌间隙(Zni)和氧空位(VO)对ZnO电导率的影响。在Ar/O2 = 80/17.5 (sccm)的混合气体中,采用直流磁控溅射法制备了ZnO薄膜。为了提高薄膜的光学和电学性能,对薄膜进行了空气和真空退火处理。采用场发射扫描电镜(FESEM)、掠入射x射线衍射(GIXRD)、拉曼光谱(Raman)、光致发光光谱(PL)和紫外可见等技术研究了热处理对ZnO薄膜结构和物理性能的影响。通过测量ZnO薄膜的片电阻和薄膜厚度来确定ZnO薄膜的电导率。XRD结果证实了沿(002)平面优先取向的六方结构退火ZnO薄膜的合成。根据ZnO薄膜的平面取向,平均晶粒尺寸在22.6 ~ 28.4 nm之间变化。ZnO结构的形貌和结晶度可以有效地控制透射率、电阻率和光学带隙。由于富锌的条件,沉积的ZnO薄膜具有较低的2.72×10-3 Ωcm电阻率。在真空退火下,获得了低电阻率(1.17×10-2 Ωcm)和更好的透光率(87%)。本研究开发的ZnO薄膜具有高透射率、低电阻率和良好的电光质量,支持其在透明和导电电极中的应用。利用Vesta将平面呈现可视化,点阵参数设置为:a = b = 3.249 Å;C = 5.207 Å;α = β = 90°;γ = 120°。在原始细胞构建和优化的基础上,构建并优化了超级细胞。最后切割(002)和(103)平面,构建平面超级单体结构。为了使厚度为10 Å的固体体的平面表示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering
In this study, we aim to investigate the effect of zinc interstitials (Zni) and oxygen vacancies (VO) on the ZnO electrical conductivity. ZnO films were synthesized via DC magnetron sputtering process using pure Zn target in gases mixture of Ar/O2 = 80/17.5 (sccm). In order to improve the optical and electrical prosperities, the obtained films were subjected to air and vacuum annealing treatment. Several techniques such as field emission scanning electron microscopy (FESEM), Grazing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy, photoluminescence spectroscopy (PL) and UV-visible were used to study the influence of heat treatment on structural and physical properties of ZnO films. Electrical conductivity of ZnO thin films was determined by measuring the sheet resistance and thickness of the films. XRD results confirm the synthesis of annealed ZnO films of the hexagonal structure with a preferential orientation along the (002) plane. The average crystallite size is altered between 22.6 to 28.4 nm dependent on the plan orientation of the ZnO film. Morphology and crystallinity of the ZnO structure could efficiently control the transmittance, electrical resistivity and optical band gap. As deposited ZnO film showed a lower electrical resistivity of 2.72×10-3 Ωcm due to the Zn-rich conditions. Under vacuum annealing, a combination of low resistivity (1.17×10-2 Ωcm) and better optical transmittance (87 %) are obtained. ZnO films developed in this study with high transmittance and low resistivity and good electro-optical quality supports their use in transparent and conductive electrode applications. The plan presentation was visualized using Vesta, with the lattice parameter set as follows: a = b = 3.249 Å; c = 5.207 Å; α = β = 90°; γ = 120°. Based on the construction and optimization of primitive cells, the supercells were constructed and then optimized. Finally, (002) and (103) planes were cut and the planar supercell structure was constructed. In order to make a plane representation for the solid bulk with 10 Å of thickness.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Study of Mechanical-Elastic Parameters of Reservoir Rocks with Respect to the Purpose of Permanent CO2 Storage Mechanical and Thermal Properties of Polyurethane-Palm Fronds Ash Composites Analysis of Friction stir processed surface quality of AA2098 aluminum alloy for aeronautical applications Review Of Grain Refinement Performance Of Aluminium Cast Alloys In Situ Production of B4C and FeV Enriched Composite Surface on Low Carbon Steel by Cast Sintering Technique
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1