基于砷化镓的谐振隧道二极管:器件方面的设计、制造、表征和应用

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2023-10-01 DOI:10.1088/1674-4926/44/10/103101
Swagata Samanta
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引用次数: 1

摘要

摘要本文综述了20世纪70年代以来砷化镓(GaAs)基谐振隧道二极管(RTD)的研究进展。据我所知,这篇文章是GaAs RTD技术的第一篇综述,它涵盖了不同的外延结构设计、制造技术和各种应用领域的表征。本文所介绍的细节将有助于读者了解以往的成就,并对GaAs RTD研究的当前趋势和未来发展有一个展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications
Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
期刊最新文献
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