Pub Date : 2025-05-01DOI: 10.1088/1674-4926/25030046
Chentai Cao, Yuli Tao, Quan Yang, Haitao Yu, Yonggang Chen, Qiangqiang Meng, Jiajiu Ye, Xu Pan
Abstract Interfacial defects and environmental instability at perovskite surfaces pose significant challenges for inverted perovskite solar cells (PSCs). Surface post-treatment strategies have emerged as a viable approach to improve film quality and passivate defects. Although organic molecules can passivate both surfaces and grain boundaries via hydrogen or covalent bonding, their limited adsorption specificity often results in incomplete defect neutralization. In this work, we introduce a bilayer passivation approach employing phenethylammonium iodide (PEAI) and n-octylammonium iodide (OAI) to concurrently mitigate non-radiative recombination and improve stability. PEAI passivates undercoordinated Pb 2+ at grain boundaries and surfaces, effectively eliminating deep-level traps and suppressing non-radiative losses. Meanwhile, OAI forms a hydrophobic barrier on the perovskite surface through its long alkyl chains, inhibiting moisture penetration without compromising interfacial charge transport. As a result, the perovskite film exhibits significantly enhanced optoelectronic performance and environmental stability, achieving a champion power conversion efficiency (PCE) of 24.48%.
{"title":"Bilayer interfacial engineering with PEAI/OAI for synergistic defect passivation in high-performance perovskite solar cells","authors":"Chentai Cao, Yuli Tao, Quan Yang, Haitao Yu, Yonggang Chen, Qiangqiang Meng, Jiajiu Ye, Xu Pan","doi":"10.1088/1674-4926/25030046","DOIUrl":"https://doi.org/10.1088/1674-4926/25030046","url":null,"abstract":"Abstract Interfacial defects and environmental instability at perovskite surfaces pose significant challenges for inverted perovskite solar cells (PSCs). Surface post-treatment strategies have emerged as a viable approach to improve film quality and passivate defects. Although organic molecules can passivate both surfaces and grain boundaries via hydrogen or covalent bonding, their limited adsorption specificity often results in incomplete defect neutralization. In this work, we introduce a bilayer passivation approach employing phenethylammonium iodide (PEAI) and n-octylammonium iodide (OAI) to concurrently mitigate non-radiative recombination and improve stability. PEAI passivates undercoordinated Pb 2+ at grain boundaries and surfaces, effectively eliminating deep-level traps and suppressing non-radiative losses. Meanwhile, OAI forms a hydrophobic barrier on the perovskite surface through its long alkyl chains, inhibiting moisture penetration without compromising interfacial charge transport. As a result, the perovskite film exhibits significantly enhanced optoelectronic performance and environmental stability, achieving a champion power conversion efficiency (PCE) of 24.48%.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"46 5","pages":"052805-052805"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147331918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D*) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.
以原子层沉积法生长的 Ga2O3 薄膜为基础，制备了具有双层导线结构的 10 × 10 太阳盲紫外线（UV）成像阵列。阵列中的这些单检测单元在 3 V 电压下表现出卓越的性能：光暗电流比 (PDCR) 为 5.5 × 105，响应率 (R) 为 4.28 A/W，外部量子效率 (EQE) 为 2.1 × 103%，检测率 (D*) 为 1.5 × 1014 Jones，并且响应时间快。该光电探测器阵列在不同光强和低工作偏压条件下表现出很高的均匀性。该阵列还具有良好的温度稳定性。在 300 °C 下，它仍能清晰成像，并在 5 V 和 1 V 电压下分别保持 34.4 和 6.45 A/W 的高 R 值。这项工作为大规模阵列 Ga2O3 太阳盲紫外探测器提供了新的思路。
{"title":"10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic","authors":"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang","doi":"10.1088/1674-4926/24030005","DOIUrl":"https://doi.org/10.1088/1674-4926/24030005","url":null,"abstract":"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\"yes\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\"yes\">D</italic>\u0000<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\"yes\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"229 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 1010 cm·Hz1/2/W, and a minimum dark current density of 1.02 × 10−5 A/cm2. Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.
{"title":"High-performance GaSb planar PN junction detector","authors":"Yuanzhi Cui, Hongyue Hao, Shihao Zhang, Shuo Wang, Jing Zhang, Yifan Shan, Ruoyu Xie, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Dongwei Jiang, Yingqiang Xu, Guowei Wang, Donghai Wu, Zhichuan Niu, Derang Cao","doi":"10.1088/1674-4926/24040024","DOIUrl":"https://doi.org/10.1088/1674-4926/24040024","url":null,"abstract":"This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 <italic toggle=\"yes\">μ</italic>m, a maximum detectivity of 8.73 × 10<sup>10</sup> cm·Hz<sup>1/2</sup>/W, and a minimum dark current density of 1.02 × 10<sup>−5</sup> A/cm<sup>2</sup>. Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"52 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24020017
Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang
In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.
{"title":"Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition","authors":"Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang","doi":"10.1088/1674-4926/24020017","DOIUrl":"https://doi.org/10.1088/1674-4926/24020017","url":null,"abstract":"In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"180 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24040041
Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu
One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.
{"title":"Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures","authors":"Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu","doi":"10.1088/1674-4926/24040041","DOIUrl":"https://doi.org/10.1088/1674-4926/24040041","url":null,"abstract":"One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"20 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24040002
Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng
The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS2 photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.
{"title":"Multiframe-integrated, in-sensor computing using persistent photoconductivity","authors":"Xiaoyong Jiang, Minrui Ye, Yunhai Li, Xiao Fu, Tangxin Li, Qixiao Zhao, Jinjin Wang, Tao Zhang, Jinshui Miao, Zengguang Cheng","doi":"10.1088/1674-4926/24040002","DOIUrl":"https://doi.org/10.1088/1674-4926/24040002","url":null,"abstract":"The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS<sub>2</sub> photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"11 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24040038
Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.
{"title":"InGaZnO-based photoelectric synaptic devices for neuromorphic computing","authors":"Jieru Song, Jialin Meng, Tianyu Wang, Changjin Wan, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen","doi":"10.1088/1674-4926/24040038","DOIUrl":"https://doi.org/10.1088/1674-4926/24040038","url":null,"abstract":"Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24030022
Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira
This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro- and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV) is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.
这项研究表明，尽管晶格失配率接近 20%，但直接生长在 Si(111) 上的碲镉合金/碲镉合金/碲镉合金异质结构具有令人惊讶的良好光学发射特性。所研究的结构是通过分子束外延生长的，并通过扫描透射电子显微镜、宏观和微观光致发光进行了表征。低温宏观光致发光实验显示出三个发射带，它们取决于碲化镉层的厚度，并具有不同的约束特性。温度测量结果表明，低能发射带（1.48 eV 处）与缺陷和束缚激子态有关，而 1.61 eV 处的主发射带具有弱 2D 特性，1.71 eV 处的高能发射带具有明确的（零维，0D）0D 特性。显微光致发光测量结果表明，异质结构中存在尖锐的强圆极化（高达 40%）发射线，这可能与异质结构中存在锰有关。这一结果为利用低成本硅技术生产具有稀释磁性半导体典型自旋控制功能的光子源提供了可能。
{"title":"Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates","authors":"Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira","doi":"10.1088/1674-4926/24030022","DOIUrl":"https://doi.org/10.1088/1674-4926/24030022","url":null,"abstract":"This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro- and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV) is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"277 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1088/1674-4926/24020020
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang
In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 1014 cm−2, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 1012 to 1 × 1014 cm−2, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.
{"title":"Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors","authors":"Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang","doi":"10.1088/1674-4926/24020020","DOIUrl":"https://doi.org/10.1088/1674-4926/24020020","url":null,"abstract":"In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10<sup>14</sup> cm<sup>−2</sup>, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10<sup>12</sup> to 1 × 10<sup>14</sup> cm<sup>−2</sup>, and we noticed that the drain−source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"53 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142215728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.1088/1674-4926/24050007
Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang
This work presents a novel radio frequency (RF) narrowband Si micro-electro-mechanical systems (MEMS) filter based on capacitively transduced slotted width extensional mode (WEM) resonators. The flexibility of the plate leads to multiple modes near the target frequency. The high Q-factor resonators of around 100 000 enable narrow bandwidth filters with small size and simplified design. The 1-wavelength and 2-wavelength WEMs were first developed as a pair of coupled modes to form a passband. To reduce bandwidth, two plates are coupled with a λ-length coupling beam. The 79.69 MHz coupled plate filter (CPF) achieved a narrow bandwidth of 8.8 kHz, corresponding to a tiny 0.011%. The CPF exhibits an impressive 34.84 dB stopband rejection and 7.82 dB insertion loss with near-zero passband ripple. In summary, the RF MEMS filter presented in this work shows promising potential for application in RF transceiver front-ends.
{"title":"A mechanically coupled MEMS filter with high-Q width extensional mode resonators","authors":"Wei Wang, Wenli Liu, Junyuan Zhao, Bo Niu, Zeyu Wu, Yinfang Zhu, Jinling Yang and Fuhua Yang","doi":"10.1088/1674-4926/24050007","DOIUrl":"https://doi.org/10.1088/1674-4926/24050007","url":null,"abstract":"This work presents a novel radio frequency (RF) narrowband Si micro-electro-mechanical systems (MEMS) filter based on capacitively transduced slotted width extensional mode (WEM) resonators. The flexibility of the plate leads to multiple modes near the target frequency. The high Q-factor resonators of around 100 000 enable narrow bandwidth filters with small size and simplified design. The 1-wavelength and 2-wavelength WEMs were first developed as a pair of coupled modes to form a passband. To reduce bandwidth, two plates are coupled with a λ-length coupling beam. The 79.69 MHz coupled plate filter (CPF) achieved a narrow bandwidth of 8.8 kHz, corresponding to a tiny 0.011%. The CPF exhibits an impressive 34.84 dB stopband rejection and 7.82 dB insertion loss with near-zero passband ripple. In summary, the RF MEMS filter presented in this work shows promising potential for application in RF transceiver front-ends.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"77 1","pages":""},"PeriodicalIF":5.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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