基于片上增益补偿技术的高精度温度传感器设计

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI:10.1166/jno.2023.3454
Le Luo
{"title":"基于片上增益补偿技术的高精度温度传感器设计","authors":"Le Luo","doi":"10.1166/jno.2023.3454","DOIUrl":null,"url":null,"abstract":"The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.6000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application\",\"authors\":\"Le Luo\",\"doi\":\"10.1166/jno.2023.3454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.\",\"PeriodicalId\":16446,\"journal\":{\"name\":\"Journal of Nanoelectronics and Optoelectronics\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2023-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoelectronics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/jno.2023.3454\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoelectronics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/jno.2023.3454","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

片上温度传感器在各种系统、工业物联网(IoT)和无线传感器网络中的集成,因其体积小、成本效益高、能够提供直接数字输出而大大便利。然而,不同的应用场景给这些传感器的设计带来了挑战。一方面,实时时钟校准需要高精度的温度传感器,而片上热管理则强调紧凑性和低电压操作。此外,简化大规模生产的校准成本具有重要的实用价值。为了解决这些挑战,本研究系统地研究了基于温度读出电路处理的不同信号域的片上互补金属氧化物半导体(CMOS)温度传感器。具体来说,研究从分析具有电流增益补偿技术的双极结晶体管(BJT)温度传感器前端电路中的几个简并点问题开始。为了解决先进技术中复杂的设计挑战和工业应用中校准的复杂性,动态组件匹配,电流增益补偿和斩波稳定被利用。介绍了一种新的温度读出动态电流增益抵消技术,在不增加功耗和面积开销的情况下提高了温度测量精度。最后,采用中芯国际55nm CMOS工艺实现了全数字CMOS温度传感器。该设计的核心面积仅为0.29 mm2,可在1.2 V至3.6 V的宽电源电压范围内高效工作。该传感器的温度范围为- 40°C至125°C,校准误差仅为±0.7°C。这一成就归功于所提出的动态电流增益补偿技术的结合。
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Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application
The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.
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来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
期刊最新文献
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