{"title":"勘误:垂直功率电子器件中超宽带隙半导体的浅层含氢掺杂剂和材料纯度的重要性(2020)。科学。技术35 125018)","authors":"Yuewei Zhang, James S Speck","doi":"10.1088/1361-6641/acfe90","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"43 1","pages":"0"},"PeriodicalIF":1.9000,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018)\",\"authors\":\"Yuewei Zhang, James S Speck\",\"doi\":\"10.1088/1361-6641/acfe90\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2023-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/acfe90\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6641/acfe90","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018)
期刊介绍:
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.