{"title":"41 ghz 19.4 dbm P<sub>sat</sub>用于5G NR应用的CMOS Doherty功率放大器","authors":"Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, Atsushi Shirane, Kenichi Okada","doi":"10.1587/elex.20.20220558","DOIUrl":null,"url":null,"abstract":"In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensation. This work achieves a saturated output power (Psat) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm2 with a static power consumption of 76mW.","PeriodicalId":50387,"journal":{"name":"Ieice Electronics Express","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2023-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications\",\"authors\":\"Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, Atsushi Shirane, Kenichi Okada\",\"doi\":\"10.1587/elex.20.20220558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensation. This work achieves a saturated output power (Psat) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm2 with a static power consumption of 76mW.\",\"PeriodicalId\":50387,\"journal\":{\"name\":\"Ieice Electronics Express\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2023-03-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ieice Electronics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.20.20220558\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Electronics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.20.20220558","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications
In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensation. This work achieves a saturated output power (Psat) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm2 with a static power consumption of 76mW.
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