Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of Ag/Cu1-xCrxO/n-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark 𝐼−𝑉 characteristics. The crucial junction parameters such as series resistance (R𝑆), rectification ratio (𝑅𝑅), ideality factor (𝑛) and barrier height (Φ𝐵) were calculated by using 𝐼−𝑉 data. The calculated values for the ideality factor (n), which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest 𝑅𝑅 value was obtained from Cu0.5Cr0.5O/n-Si diode. In addition, the capacitance-voltage (𝐶−𝑉) characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 𝐶−2−𝑉 graphs were employed to calculate the values of 𝑁𝑣, 𝐸𝑓, 𝐸𝑚𝑎𝑥, and Φ𝐵 (𝐶−𝑉). The results show that the electrical properties of Ag/Cu1-xCrxO/n-Si diodes can be controlled by various chromium doping concentration.