四碘化锡与臭氧原子层沉积法生长氧化锡薄膜的性质

IF 2.6 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Beilstein Journal of Nanotechnology Pub Date : 2023-11-13 DOI:10.3762/bjnano.14.89
Kristjan Kalam, Peeter Ritslaid, Tanel Käämbre, Aile Tamm, Kaupo Kukli
{"title":"四碘化锡与臭氧原子层沉积法生长氧化锡薄膜的性质","authors":"Kristjan Kalam, Peeter Ritslaid, Tanel Käämbre, Aile Tamm, Kaupo Kukli","doi":"10.3762/bjnano.14.89","DOIUrl":null,"url":null,"abstract":"Polycrystalline SnO 2 thin films were grown by atomic layer deposition (ALD) on SiO 2 /Si(100) substrates from SnI 4 and O 3 . Suitable evaporation temperatures for the SnI 4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO 2 films was established.","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":"53 12","pages":"0"},"PeriodicalIF":2.6000,"publicationDate":"2023-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone\",\"authors\":\"Kristjan Kalam, Peeter Ritslaid, Tanel Käämbre, Aile Tamm, Kaupo Kukli\",\"doi\":\"10.3762/bjnano.14.89\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline SnO 2 thin films were grown by atomic layer deposition (ALD) on SiO 2 /Si(100) substrates from SnI 4 and O 3 . Suitable evaporation temperatures for the SnI 4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO 2 films was established.\",\"PeriodicalId\":8802,\"journal\":{\"name\":\"Beilstein Journal of Nanotechnology\",\"volume\":\"53 12\",\"pages\":\"0\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2023-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Beilstein Journal of Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3762/bjnano.14.89\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3762/bjnano.14.89","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

采用原子层沉积法(ALD)在sio2 /Si(100)衬底上生长了多晶sno2薄膜。确定了SnI 4前驱体的适宜蒸发温度以及每循环生长与衬底温度的关系。在225 ~ 600℃的温度范围内发现了薄膜中的晶体生长。光谱分析显示,在300°C以上的温度下生长的薄膜中残留少量的碘,并暗示形成了单相氧化物。确定了该前驱体体系制备二氧化硅薄膜的适宜性。
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Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone
Polycrystalline SnO 2 thin films were grown by atomic layer deposition (ALD) on SiO 2 /Si(100) substrates from SnI 4 and O 3 . Suitable evaporation temperatures for the SnI 4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO 2 films was established.
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来源期刊
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.70
自引率
3.20%
发文量
109
审稿时长
2 months
期刊介绍: The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology. The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.
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